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Infineon Dual HEXFET 1 N-Channel MOSFET, 3 A, 50 V Enhancement Mode, 8-Pin SO-8 AUIRF7103QTR
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.5mm |
| Length | 5mm |
| Model | AUIRF7103QTR |
| Width | 4mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | SO-8 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Number of Elements per Chip | 1 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 3A |
| Maximum Drain Source Voltage Vds | 50V |
| Maximum Drain Source Resistance Rds | 130mΩ |
| Channel Mode | Enhancement |
| Typical Gate Charge Qg @ Vgs | 10nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
| Transistor Configuration | Dual |
Key Features
- Offers low on-resistance for efficient power switching.
- Features dual N-channel MOSFET transistor configuration.
- Maximum drain current of 3 amperes for robust operation.
- Maximum drain-source voltage rated at 50 volts.
- Enhancement mode with logic level gate drive capability.
- Compact SO-8 surface mount package with 8 pins for versatile PCB design.
- Wide operating temperature range from -55°C to 175°C.
- Automotive-grade AEC-Q101 standard compliance.
Product Description
Infineon's AUIRF7103QTR Dual HEXFET 1 N-Channel MOSFET is a high-performance power transistor designed for efficient switching and low conduction losses. The device integrates dual N-channel MOSFETs in a compact SO-8 package suitable for surface mount applications in automotive and industrial environments.
Manufactured using advanced planar HEXFET technology, it offers a low on-resistance of 130 mΩ at a maximum drain current of 3 amperes and a drain-source voltage of 50 volts, making it ideal for various power management circuits and switching applications.
The enhancement mode gate allows logic level drive compatibility and fast switching behavior with a typical gate charge of 10 nanocoulombs at Vgs. It supports a wide operating temperature range from -55°C to 175°C, ensuring ruggedness and reliability under demanding conditions.
The transistor configuration is dual, integrating two N-channel MOSFETs within the device, enabling compact circuit layouts. The device complies with the automotive AEC-Q101 qualification standard, certifying its suitability for automotive electronics.
Package dimensions are 5 mm in length, 4 mm in width, and 1.5 mm in height, accommodating compact electronic designs. This MOSFET is widely used in industrial control systems, automotive power electronics, consumer electronics, and manufacturing equipment for robust power switching and amplification.
Offers low on-resistance for efficient power switching. Features dual N-channel MOSFET transistor configuration. Maximum drain current of 3 amperes for robust operation. Maximum drain-source voltage rated at 50 volts. Enhancement mode with logic level gate drive capability.
Compact SO-8 surface mount package with 8 pins for versatile PCB design. Wide operating temperature range from -55°C to 175°C. Automotive-grade AEC-Q101 standard compliance. Maximum gate-source voltage of ±20 V to ensure reliable switching.
Typical gate charge of 10 nC promoting fast switching performance. EnvMart offers a comprehensive range of semiconductor components including MOSFETs for automotive, industrial, laboratory, and commercial electronics applications.
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Frequently Asked Questions
The maximum continuous drain current for this model is 3 amperes.
The maximum drain-source voltage rated for this unit is 50 volts.
The typical gate charge at Vgs is 10 nanocoulombs.
This model features a maximum drain-source resistance of 130 milliohms.
It operates within a wide temperature range from -55°C to 175°C.
The MOSFET comes in a compact SO-8 surface mount package.
This unit has 8 pins.
It complies with the automotive AEC-Q101 standard.
This model features a dual N-channel configuration.
The maximum gate-source voltage for this device is ±20 volts.
The forward voltage of this unit is 1.2 volts.
This MOSFET is suitable for various power management circuits and switching applications in automotive and industrial environments.
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