Infineon CoolMOS CE N-Channel MOSFET, 18.5 A, 550 V Enhancement Mode, 3-Pin TO-220 IPP50R190CEXKSA1

Infineon IPP50R190CEXKSA1 CoolMOS CE N-Channel MOSFET is a high-performance transistor designed for power electronic applications requiring efficient switching and power density enhancements. It operates with an 18.5 amp continuous drain current and withstands drain-source voltages up to 550 volts in an enhancement mode configuration. Packaged in a 3-pin TO-220 form factor, this device supports through-hole mounting methods commonly used in industrial and commercial electronics design.

The CoolMOS CE series from Infineon is engineered to deliver low conduction losses characterized by the low maximum drain-source resistance of 190 milliohms, improving overall device efficiency. The MOSFET offers a maximum power dissipation of 127 watts, allowing it to handle substantial power loads with optimal thermal management. Its gate charge of 47.2 nanocoulombs at the standard gate voltage facilitates fast switching performance essential for high-frequency power conversion.

Designed to operate reliably under a wide temperature span from -55°C to a maximum of 150°C, this MOSFET is suitable for demanding environmental conditions. The device’s maximum gate-source voltage tolerance of ±30 volts adds protection against voltage spikes during switching operations.

Compact physical dimensions including a height of 15.95 mm, length of 10.36 mm, and width of 4.57 mm make it adaptable to various circuit board layouts without compromising on performance. This makes it ideal for industrial electronics, power supplies, motor drives, and renewable energy systems requiring efficient and robust power transistors.

Infineon’s CoolMOS technology is known for energy-efficient semiconductor solutions, helping reduce energy losses and enhance system reliability. This particular model supports designers in achieving stringent power conversion demands and contributes to advancing industrial and commercial electronic equipment technology.

High efficiency CoolMOS CE series for power density improvements. N-channel enhancement mode operation for reliable performance. Low maximum drain-source resistance of 190 mΩ for reduced losses. Maximum power dissipation capacity of 127 W for robust thermal handling.

Wide operating temperature range from -55°C up to 150°C. Typical gate charge of 47.2 nC at Vgs for fast switching. TO-220 through-hole mounting package with 3 pins for easy integration. Maximum gate-source voltage rated at ±30 V for protection.

Compact dimensions of 15.95 mm height, 10.36 mm length, and 4.57 mm width.

This product is a key component within categories such as industrial power electronics, motor drives, and renewable energy systems. Explore more components and advanced semiconductor devices at EnvMart.