Infineon HEXFET N-Channel MOSFET, 57 A, 100 V, 3-Pin TO-263 Package IRF3710STRLPBF

Infineon IRF3710STRLPBF HEXFET N-Channel MOSFET is a high-performance discrete semiconductor device designed to handle substantial power loads with efficiency and reliability. Featuring a continuous drain current of 57 amperes and a maximum drain-source voltage of 100 volts, this 3-pin TO-263 package MOSFET is well suited for industrial and power electronics applications where fast switching and low conduction losses are critical.

The device offers a low on-resistance of 23 milliohms that minimizes power dissipation and heat buildup during operation. It has a maximum power dissipation rating of 3.8 watts when mounted on a surface, along with a broad temperature range between -55°C and 175°C, making it robust for various thermal environments.

The IRF3710STRLPBF MOSFET supports reliable gate control with a maximum gate-source voltage of ±20 volts and a typical gate charge of 86.7 nanocoulombs, facilitating fast switching speeds important in voltage regulation and motor control circuits. Its dimensions (10.67 mm length, 9.65 mm width, 4.83 mm height) enable compact PCB designs in power supplies and converter modules.

Manufactured to comply with EIA 418 standards and being lead-free, it supports environmentally conscious electronic designs. Its surface mount package type (TO-263) simplifies automated assembly processes in mass production settings.

This MOSFET is ideal for use in industrial power management, electronic component manufacturing, and specialized equipment requiring efficient semiconductor switching devices. Infineon's HEXFET technology ensures reliable, high-current performance suited for demanding electrical and electronic applications.

Supports continuous drain current of 57 amperes for demanding applications. Maximum drain-source voltage rating of 100 volts ensures reliable operation. Features a low on-resistance of 23 milliohms for efficient power management.

Ability to dissipate up to 3.8 watts of power in surface mount configurations. Wide operating temperature range from -55°C to 175°C enhances durability. Typical gate charge of 86.7 nanocoulombs allows for fast switching performance.

Maximum gate-source voltage rating of ±20 volts provides robust gate control. Compact dimensions measuring 10.67 mm length, 9.65 mm width, and 4.83 mm height. Compliant with EIA 418 standards for quality and performance assurance.

Lead-free construction supports environmentally friendly applications. Ideal for industrial, power management, and electronic component manufacturing uses. Explore more products in the MOSFET category at EnvMart for high-quality semiconductor components tailored to industrial and electronic design needs.