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Infineon 800V CoolMOS P7 N-Channel MOSFET, 4.5A, 800V, 3-Pin TO-220 IPP80R1K2P7XKSA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 9.45mm
Length 10.36mm
Model IPP80R1K2P7XKSA1
Width 4.57mm
Mount Type Through Hole
Series 800V CoolMOS P7
Maximum Operating Temperature 150°C
Package Type TO-220
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 4.5A
Maximum Drain Source Voltage Vds 800V
Maximum Drain Source Resistance Rds 1.2Ω
Maximum Power Dissipation Pd 37W
Typical Gate Charge Qg @ Vgs 11nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 900mV

Key Features

  • Features best-in-class DPAK RDS(on) for efficient switching performance.
  • Has a typical gate charge of 11nC at Vgs.
  • Integrates a Zener diode for enhanced ESD protection.
  • Operates within a temperature range from -55°C to 150°C.
  • Designed for through-hole mounting with a compact TO-220 package size.
  • Maximum power dissipation of 37W supports industrial power applications.
  • Offers a low forward voltage of 900mV for improved efficiency.
  • Includes a maximum gate-source voltage rating of 20V for reliable operation.

Product Description

Infineon IPP80R1K2P7XKSA1 is an 800V CoolMOS P7 N-channel power MOSFET designed primarily for flyback converter applications including adapters, chargers, LED drivers, audio SMPS, AUX circuits, and industrial power supplies. It features a maximum continuous drain current of 4.5A and a drain-source voltage rating of 800V, ensuring reliable performance in demanding environments.

This MOSFET comes in a 3-pin TO-220 through-hole package, facilitating easy mounting and integration. Its best-in-class low RDS(on) resistance reduces conduction losses, improving overall efficiency. The device includes an integrated Zener diode for effective ESD protection, enhancing device robustness.

The typical gate charge of 11nC at Vgs supports fast switching speeds while maintaining low gate drive power. It operates safely in a wide temperature range from -55°C minimum to 150°C maximum, suitable for harsh industrial conditions.

Key electrical features such as a forward voltage of 900mV and maximum gate-source voltage of 20V help optimize circuit design and device protection. The compact physical dimensions (length 10.36mm, height 9.45mm, width 4.57mm) make it suitable for space-constrained applications.

Best-in-class DPAK RDS(on) for reduced conduction losses. Typical gate charge of 11nC optimizes switching efficiency. Integrated Zener diode offers enhanced ESD protection. Wide operating temperature range from -55°C to 150°C.

Through-hole mount type with TO-220 package. Maximum power dissipation rated at 37W. Low forward voltage drop of 900mV for efficiency. Maximum gate-source voltage rating of 20V ensures safety. Compact form factor suitable for industrial electronic designs.

This Infineon MOSFET is widely used in industrial, commercial, and audio power supply applications due to its robust design and high-voltage capability. It caters well to power management sectors including LED drivers, switch-mode power supplies, and auxiliary power circuits.

Explore more high-quality MOSFETs and semiconductor devices at EnvMart to meet your electronic design and manufacturing requirements.

Infineon 800V CoolMOS P7 N-Channel MOSFET, 4.5A, 800V, 3-Pin TO-220 IPP80R1K2P7XKSA1
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Frequently Asked Questions

The maximum continuous drain current for this model is 4.5A.

This MOSFET has a maximum drain-source voltage rating of 800V.

The typical gate charge at Vgs for this unit is 11nC.

The maximum power dissipation rated for this MOSFET is 37W.

It operates within a temperature range from -55°C to 150°C.

This model comes in a TO-220 package type, designed for through-hole mounting.

The forward voltage drop for this unit is 900mV.

The maximum gate-source voltage rating for this model is 20V.

The dimensions are 10.36mm in length, 9.45mm in height, and 4.57mm in width.

This MOSFET features an N-channel type.

Yes, it includes an integrated Zener diode for enhanced ESD protection.

It is designed primarily for flyback converter applications, including adapters, chargers, LED drivers, and industrial power supplies.

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