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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 9.45mm |
| Length | 10.36mm |
| Model | IPP80R1K2P7XKSA1 |
| Width | 4.57mm |
| Mount Type | Through Hole |
| Series | 800V CoolMOS P7 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 4.5A |
| Maximum Drain Source Voltage Vds | 800V |
| Maximum Drain Source Resistance Rds | 1.2Ω |
| Maximum Power Dissipation Pd | 37W |
| Typical Gate Charge Qg @ Vgs | 11nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 900mV |
Infineon IPP80R1K2P7XKSA1 is an 800V CoolMOS P7 N-channel power MOSFET designed primarily for flyback converter applications including adapters, chargers, LED drivers, audio SMPS, AUX circuits, and industrial power supplies. It features a maximum continuous drain current of 4.5A and a drain-source voltage rating of 800V, ensuring reliable performance in demanding environments.
This MOSFET comes in a 3-pin TO-220 through-hole package, facilitating easy mounting and integration. Its best-in-class low RDS(on) resistance reduces conduction losses, improving overall efficiency. The device includes an integrated Zener diode for effective ESD protection, enhancing device robustness.
The typical gate charge of 11nC at Vgs supports fast switching speeds while maintaining low gate drive power. It operates safely in a wide temperature range from -55°C minimum to 150°C maximum, suitable for harsh industrial conditions.
Key electrical features such as a forward voltage of 900mV and maximum gate-source voltage of 20V help optimize circuit design and device protection. The compact physical dimensions (length 10.36mm, height 9.45mm, width 4.57mm) make it suitable for space-constrained applications.
Best-in-class DPAK RDS(on) for reduced conduction losses. Typical gate charge of 11nC optimizes switching efficiency. Integrated Zener diode offers enhanced ESD protection. Wide operating temperature range from -55°C to 150°C.
Through-hole mount type with TO-220 package. Maximum power dissipation rated at 37W. Low forward voltage drop of 900mV for efficiency. Maximum gate-source voltage rating of 20V ensures safety. Compact form factor suitable for industrial electronic designs.
This Infineon MOSFET is widely used in industrial, commercial, and audio power supply applications due to its robust design and high-voltage capability. It caters well to power management sectors including LED drivers, switch-mode power supplies, and auxiliary power circuits.
Explore more high-quality MOSFETs and semiconductor devices at EnvMart to meet your electronic design and manufacturing requirements.
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