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Infineon 600V CoolMOS P7 N-Channel MOSFET, 12A Continuous Drain Current, 280mΩ Rds, 24W Power Dissipation IPA60R280P7SXKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IPA60R280P7SXKSA1 |
| Mount Type | Through Hole |
| Series | 600V CoolMOS P7 |
| Maximum Operating Temperature | +150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -40°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 12A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 280mΩ |
| Channel Mode | N |
| Maximum Power Dissipation Pd | 24W |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 900mV |
Key Features
- Supports continuous drain current up to 12 amperes for sustained performance.
- Maximum drain-source voltage rating of 600 volts for heavy-duty switching.
- Low on-resistance of 280 milliohms reduces conduction losses.
- Capable of dissipating up to 24 watts of power during operation.
- Wide operating temperature range from -40°C to +150°C ensures reliability in harsh environments.
- Robust gate-source voltage tolerance up to 30 volts enhances gate drive flexibility.
- TO-220 package type fitting through-hole mounting for easy integration on circuit boards.
- Forward voltage of 0.9 volts minimizes voltage drop in conduction mode.
Product Description
Infineon IPA60R280P7SXKSA1 is a high-voltage 600V CoolMOS P7 power MOSFET featuring an N-channel configuration and designed for through-hole mounting in TO-220 packages. It enables efficient switching with up to 12A continuous drain current, a low 280mΩ on-state resistance, and 24W maximum power dissipation, supporting thermal and load reliability.
This MOSFET operates reliably across a broad temperature range from -40°C to +150°C, demonstrating suitability for demanding industrial, power conversion, and motor-drive environments.
With a gate-source voltage tolerance of 30V and a low forward voltage drop of 0.9V, it offers robust performance for power switching tasks requiring efficient conduction and thermal management.
Continuous drain current rating of 12A supports substantial load requirements. 600V maximum drain-source voltage rating for high-voltage applications. Through-hole TO-220 package facilitates easy mounting and heat dissipation.
Wide ambient operating temperature ensures durability in various conditions. Low on-resistance reduces conduction losses, improving overall efficiency. Designed for switch-mode power supplies, motor drives and industrial switching circuits.
Not automotive standard qualified; evaluate suitability for vehicle integration.
This MOSFET is ideal for prototype boards and industrial designs requiring a reliable power transistor with enhanced switching capabilities. It supports robust gate-drive voltages and controlled switching of substantial currents with efficient thermal handling.
Explore the Electronics & Electricals category on EnvMart for additional semiconductor solutions and power devices tailored for advanced industrial applications.
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Frequently Asked Questions
The maximum continuous drain current for this model is 12A.
It has a maximum drain-source voltage rating of 600V.
The on-resistance is rated at 280mΩ, which helps reduce conduction losses.
This MOSFET can dissipate up to 24W of power during operation.
It operates within a temperature range of -40°C to +150°C.
The IPA60R280P7SXKSA1 uses a TO-220 package type for through-hole mounting.
It has a robust gate-source voltage tolerance of up to 30V.
The forward voltage drop is 0.9V, which minimizes voltage drop in conduction mode.
This model features a pin count of 3.
It features an N-channel configuration.
This model is not automotive standard qualified; suitability for vehicle integration should be evaluated separately.
It is part of the 600V CoolMOS P7 series.
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