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Infineon HEXFET N-Channel MOSFET 5 A 200 V Enhancement 3-Pin TO-252 IRFR220NTRLPBF

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Infineon HEXFET N-Channel MOSFET 5 A 200 V Enhancement 3-Pin TO-252 IRFR220NTRLPBF

Name: Infineon HEXFET N-Channel MOSFET 5 A 200 V Enhancement 3-Pin TO-252 IRFR220NTRLPBF
Brand: Infineon
SKU: 412202
Price: 0.56 USD
Availability: InStock

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Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Height	10.41mm
Length	6.73mm
Model	IRFR220NTRLPBF
Width	2.39mm
Mount Type	Surface
Series	HEXFET
Maximum Operating Temperature	175°C
Package Type	TO-252
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	5A
Maximum Drain Source Voltage Vds	200V
Maximum Drain Source Resistance Rds	600mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	43W
Typical Gate Charge Qg @ Vgs	15nC
Maximum Gate Source Voltage Vgs	20V
Forward Voltage Vf	1.3V

Key Features

This MOSFET supports a maximum continuous drain current of 5 amperes.
The maximum drain-source voltage rating is 200 volts.
It features a surface mount type package for compact PCB integration.
The device offers low drain-source resistance of 600 milliohms for efficient switching.
Maximum power dissipation of up to 43 watts enables reliable performance.
It operates reliably across a wide temperature range from -55°C to 175°C.
The typical gate charge is 15 nanocoulombs at Vgs, ensuring fast switching speeds.
The package dimensions include height 10.41 mm, length 6.73 mm, and width 2.39 mm.

Product Description

Infineon IRFR220NTRLPBF is a HEXFET N-Channel MOSFET designed for power electronics applications requiring up to 5 A continuous current and a voltage rating of 200 V. Packaged in a TO-252 surface mount D-Pak style case with 3 pins, it offers excellent thermal and electrical performance in a compact form.

This device features a planar cell structure optimized for a broad safe operating area (SOA) and is qualified according to JEDEC standards. Its low on-resistance (600 milliohms max) reduces conduction losses, making it suitable for switching and amplification in high-frequency circuits.

The transistor supports a maximum power dissipation of 43 W and maintains functional integrity over an ambient temperature range from -55°C to 175°C, accommodating demanding industrial environments and automotive electronics.

The typical gate charge of 15 nanocoulombs at gate-source voltage ensures quick switching and minimal delay, suitable for efficient power management and conversion tasks. Dimensions of 10.41 mm height, 6.73 mm length, and 2.39 mm width facilitate PCB layout optimization in compact electronic devices.

Supports 5 A continuous drain current with 200 V voltage rating. Compact 3-pin TO-252 (D-Pak) surface mount package. Low drain-source resistance at 600 mΩ for efficient conduction. Wide operating temperature range from -55°C to 175°C.

Typical gate charge of 15 nC for fast switching applications. Maximum power dissipation of 43 W provides reliable thermal performance.

This Infineon HEXFET MOSFET is ideal for industrial, automotive, and electronic power switching applications requiring robust, efficient performance with small form factor packaging.

Explore a wide range of semiconductor components and power MOSFETs categories at EnvMart for your electronic design and manufacturing needs.