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Infineon 600V CoolMOS C7 N-Channel MOSFET, 13 A, 600 V Enhancement Mode, 3-Pin TO-263 IPB60R180C7ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 15.88mm |
| Length | 10.31mm |
| Model | IPB60R180C7ATMA1 |
| Width | 4.57mm |
| Mount Type | Surface |
| Series | 600V CoolMOS C7 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 13A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 180mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 68W |
| Typical Gate Charge Qg @ Vgs | 24nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 900mV |
Key Features
- Designed for surface mount applications with a TO-263 package type.
- Maximum continuous drain current of 13 amperes ensures reliable power handling.
- Excellent switching performance with a typical gate charge of 24nC at Vgs.
- Maximum drain-source resistance of 180 milliohms for efficient conduction.
- Wide operating temperature range from -55°C to 150°C for robust industrial applications.
- Can handle a peak power dissipation of up to 68 watts.
- Features a rugged body diode to enhance durability under hard switching conditions.
- Compact dimensions with length 10.31mm, width 4.57mm, and height 15.88mm.
Product Description
Infineon IPB60R180C7ATMA1 is a high-performance 600V CoolMOS C7 N-Channel MOSFET optimized for industrial and electronic power applications. Featuring an enhancement mode channel, the device delivers a maximum continuous drain current of 13A and withstands a drain-source voltage of 600V. Packaged in a compact 3-pin TO-263 surface mount, it supports efficient power management in modern high-density electronic circuits.
The CoolMOS C7 series offers a significant reduction in turn-off losses compared to earlier models, making it ideal for power factor correction (PFC), telecom rectifiers, and hard-switching topologies. This MOSFET enables enhanced switching performance with a typical gate charge of 24nC at Vgs and a low drain-source resistance of 180 milliohms, optimizing energy efficiency and reducing total cost of ownership in data centers and charger applications.
Its robust thermal capabilities include operation from -55°C to 150°C and power dissipation up to 68W. The rugged body diode improves reliability in demanding switching conditions. Compact dimensions (10.31mm length, 4.57mm width, 15.88mm height) facilitate space-saving designs.
Applications include industrial power conversion, telecommunication power supplies, high-efficiency servers, and consumer electronics power management. The device does not carry automotive-specific certifications but adheres to standard industrial quality requirements.
Surface mounting TO-263 package suitable for automated assembly. Efficient gate control with low gate charge ensures high-frequency operation. Wide temperature range supports harsh environmental conditions. Ideal for improving efficiency in power supplies for data centers and telecom equipment.
Low conduction and switching losses enhance thermal management.
Infineon's 600V CoolMOS C7 MOSFETs deliver optimized performance for cost-sensitive, high-efficiency power electronics design. Explore similar MOSFETs and relevant power semiconductors in the Electronics & Electricals category at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current of this model is 13 amperes.
It can withstand a maximum drain-source voltage of 600 volts.
The typical gate charge at Vgs is 24 nanocoulombs (nC).
The dimensions of the TO-263 package are 10.31mm in length, 4.57mm in width, and 15.88mm in height.
This model can handle a maximum power dissipation of up to 68 watts.
The operating temperature range is from -55°C to 150°C.
It supports surface mounting with a TO-263 package type.
The maximum drain-source resistance is 180 milliohms (mΩ).
This model does not carry automotive-specific certifications but adheres to standard industrial quality requirements.
It is suitable for applications including industrial power conversion, telecommunication power supplies, and high-efficiency servers.
This model features an enhancement mode N-channel.
The forward voltage of the body diode is 900 millivolts (mV).
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