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Infineon 700V CoolMOS P7 N-Channel MOSFET, 6.5 A, 700 V Enhancement, 3-Pin TO-220 IPA70R750P7SXKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IPA70R750P7SXKSA1 |
| Mount Type | Through Hole |
| Series | 700V CoolMOS P7 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 6.5A |
| Maximum Drain Source Voltage Vds | 700V |
| Maximum Drain Source Resistance Rds | 750mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 21.2W |
| Typical Gate Charge Qg @ Vgs | 8.3nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 900mV |
Key Features
- Maximum continuous drain current of 6.5 A ensures reliable current handling.
- Maximum drain-source voltage of 700 V supports high-voltage circuits.
- Includes integrated ESD protection and low switching losses.
- Packaged in a 3-pin TO-220 through-hole mount for easy circuit integration.
- Capable of operating reliably from -55°C to 150°C temperature range.
- Typical gate charge of 8.3 nC enables fast switching performance.
- Maximum power dissipation rating of 21.2 W for thermal management.
- Enhanced channel mode technology improves efficiency and reduces power losses.
Product Description
This MOSFET features an enhancement mode channel with a maximum continuous drain current of 6.5 A and a maximum drain-source voltage of 700 V, making it suitable for applications where efficient high voltage switching is required.
Its TO-220 package and through-hole mount type allow for reliable mechanical and electrical connection in power circuits, while the 3-pin configuration simplifies integration.
The device offers extremely low switching losses and excellent thermal behavior, enabling customers to design slim and compact power supplies. The typical gate charge of 8.3 nC and the low on-resistance contribute to high overall efficiency.
It can reliably operate in harsh environments with temperatures ranging from -55°C to 150°C, making it versatile for industrial and consumer electronics applications. Maximum continuous drain current of 6.5 A. Maximum drain-source voltage of 700 V.
Low typical gate charge of 8.3 nC. High power dissipation capability of 21.2 W. Robust gate-source voltage maximum of 20 V. Forward voltage of 900 mV. Thermally efficient TO-220 packaging. Enhancement mode N-Channel technology.
Integrated ESD protection diode. Designed for switched-mode power supply (SMPS) and adapter applications. This MOSFET is suitable for industrial electronics, power management, consumer electronics, and other sectors requiring reliable, efficient high voltage switching components.
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Frequently Asked Questions
The maximum continuous drain current of this MOSFET is 6.5 A.
This model has a maximum drain-source voltage of 700 V, suitable for high-voltage applications.
The typical gate charge for this MOSFET is 8.3 nC, which contributes to its fast switching performance.
The maximum power dissipation rating is 21.2 W, allowing for effective thermal management.
It can operate reliably in a temperature range from -55°C to 150°C.
This model is packaged in a TO-220 type, which allows for through-hole mounting.
The maximum gate-source voltage is 20 V.
The maximum drain-source resistance is 750 mΩ, contributing to its efficiency.
This MOSFET is suitable for switched-mode power supply (SMPS) and adapter applications, as well as industrial and consumer electronics.
Yes, it includes an integrated ESD protection diode to enhance reliability.
This model features an enhancement mode N-channel configuration.
The IPA70R750P7SXKSA1 has a 3-pin configuration, simplifying integration into circuits.
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