Infineon HEXFET N-Channel MOSFET, 110 A, 55 V, 3-Pin TO-262 IRF3205ZLPBF

Infineon IRF3205ZLPBF HEXFET N-Channel MOSFET is engineered for high-performance power applications requiring large current handling and efficient switching.

This 3-pin TO-262 packaged MOSFET supports a maximum continuous drain current of 110 A and a drain-source voltage rating of 55 V, making it suitable for power supply, motor control, and switching regulator circuits.

The device features a low typical drain-source resistance of 6.5 milliohms, which contributes to reduced conduction losses during operation. It supports a maximum power dissipation of 170 W, allowing reliable operation in demanding thermal environments up to 175°C.

The MOSFET is designed for through-hole mounting ensuring strong mechanical connection and compatibility with standard PCB assembly processes.

Additional attributes include a typical gate charge of 110 nC at 10 V gate-source voltage, allowing precise gate signal control for fast switching. The maximum gate-source voltage rating of 20 V ensures durability under various control voltages. It has a forward voltage drop of 1.3 V supporting switching efficiency.

This device is lead-free, conforming to environmental regulations and suitable for industrial, laboratory, manufacturing, and power electronics applications. Extremely low on resistance per silicon area for energy-efficient switching.

Wide operating temperature range from -55°C to 175°C for harsh environments. Robust power dissipation rating of 170 W supports high-power designs. Through-hole TO-262 package facilitates thermal management and durability.

Ideal for industrial power supplies, motor drives, and switching applications.

Explore the Infineon MOSFET range for reliable high-current semiconductor solutions in your next electronic design. EnvMart provides detailed specifications and sourcing options for industrial-grade MOSFET components.