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Infineon OptiMOS N-Channel MOSFET 64 A 60 V 8-Pin SuperSO Surface-Mount BSC065N06LS5ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.2mm |
| Length | 5.35mm |
| Model | BSC065N06LS5ATMA1 |
| Width | 6.1mm |
| Mount Type | Surface |
| Series | OptiMOS |
| Maximum Operating Temperature | 150°C |
| Package Type | SuperSO |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 64A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 9.2mΩ |
| Channel Mode | N |
| Maximum Power Dissipation Pd | 46W |
| Typical Gate Charge Qg @ Vgs | 10nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Operates at a maximum continuous drain current of 64 A.
- Supports a maximum drain-source voltage of 60 V for mid-voltage applications.
- Features a very low drain-source resistance of 9.2 mΩ to reduce conduction losses.
- Designed for fast switching with a typical gate charge of 10 nC.
- Maximum power dissipation rating of 46 W for sustained operation.
- Wide operating temperature range from -55°C to 150°C for demanding environments.
- Compact 8-pin SuperSO package suitable for dense PCB layouts.
- Gate-source voltage withstand capability up to 20 V.
Product Description
Infineon BSC065N06LS5ATMA1 is an OptiMOS Series N-Channel MOSFET optimized for high-current switching and power management in compact electronic assemblies. It supports a maximum continuous drain current of 64 A and a drain-source voltage rating of 60 V. Manufactured in an 8-pin SuperSO surface-mount package, this device is ideal for applications requiring low conduction losses and fast switching transitions in mid-voltage power conversion systems.
The MOSFET features a very low drain-source resistance of 9.2 mΩ, which minimizes losses and improves efficiency in power supplies, motor drive stages, and battery management circuits. With a typical gate charge of 10 nC, it enables rapid switching while keeping gate-drive currents moderate, facilitating efficient operation with common driver ICs.
Rated for maximum power dissipation of 46 W, this component delivers reliable power transfer under continuous load. It withstands ambient temperatures from -55°C to 150°C, making it suitable for harsh industrial, automotive, and telecommunications environments.
The compact 8-pin SuperSO form factor allows for space-saving PCB layouts and automated assembly processes. This package also facilitates effective thermal management through optimized solder paths.
Operates at a maximum continuous drain current of 64 A. Maximum drain-source voltage of 60 V suitable for mid-voltage systems. Low on-resistance of 9.2 mΩ to reduce conduction losses. Typical gate charge of 10 nC for fast switching transitions.
Power dissipation rating of 46 W enables sustained power delivery. Wide operating temperature range from -55°C to 150°C. Compact 8-pin SuperSO surface-mount package. Gate-source voltage withstand of up to 20 V for typical gate drive voltages.
This MOSFET is commonly used in synchronous buck converters for power supplies, motor-drive stages in industrial controllers, battery management circuits for high-current switching, DC-DC converters in telecommunications equipment, and server power regulation boards. Its robustness and compact size make it well suited to demanding industrial, commercial, and communications applications.
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Frequently Asked Questions
It operates at a maximum continuous drain current of 64 A.
The maximum drain-source voltage rating is 60 V, suitable for mid-voltage applications.
It features a very low drain-source resistance of 9.2 mΩ to reduce conduction losses.
The typical gate charge is 10 nC, allowing for rapid switching transitions.
The maximum power dissipation rating is 46 W for sustained operation under load.
It can operate within a wide temperature range from -55°C to 150°C.
This model is housed in a compact 8-pin SuperSO surface-mount package.
The height of this model is 1.2 mm.
The dimensions are 5.35 mm in length, 6.1 mm in width, and 1.2 mm in height.
It is commonly used in synchronous buck converters, motor-drive stages, and battery management circuits.
It has a maximum gate-source voltage withstand capability of up to 20 V.
This model is an N-channel MOSFET.
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