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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 21.1mm |
| Length | 16.13mm |
| Model | IPW60R031CFD7XKSA1 |
| Width | 5.21mm |
| Mount Type | Through Hole |
| Series | 600V CoolMOS CFD7 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 63A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 31mΩ |
| Maximum Power Dissipation Pd | 278W |
| Typical Gate Charge Qg @ Vgs | 141nC |
| Maximum Gate Source Voltage Vgs | 4.5V |
| Forward Voltage Vf | 1V |
Infineon IPW60R031CFD7XKSA1 is a 600V CoolMOS CFD7 series N-Channel MOSFET designed for high-efficiency power switching applications. It delivers a maximum continuous drain current of 63 A and withstands a drain source voltage of up to 600 V. Packaged in a robust 3-pin TO-247 housing, it supports through-hole mounting typical in industrial and power electronics designs.
This MOSFET features an integrated fast body diode and reduced typical gate charge of 141 nC at Vgs, which contributes to improved switching speeds and lower power losses. The device offers excellent turn-off behavior and a reverse recovery charge significantly lower compared to competitors, enhancing system efficiency and thermal performance.
With a maximum power dissipation rating of 278 watts and an operating temperature range from -55°C to 150°C, this component ensures reliable performance under harsh conditions commonly found in industrial, automotive, and power management environments. The maximum drain source resistance of 31 mΩ further supports low conduction losses, improving energy efficiency.
Physical dimensions of 21.1 mm height, 16.13 mm length, and 5.21 mm width make it suitable for compact circuit designs. It is optimized for resonant topologies, offering best-in-class hard commutation ruggedness, making it ideal for advanced motor drive, power conversion, and inverter applications.
Features reduced gate charge of 141 nC at Vgs, enhancing switching efficiency. Includes integrated fast body diode with improved turn-off behavior. Maximum power dissipation of 278 watts ensures robust operation. Wide operating temperature range from -55°C to 150°C for reliability.
Low maximum drain source resistance of 31 milliohms reduces conduction losses. Compact TO-247 3-pin package supports through-hole mounting. Best-in-class hard commutation ruggedness for resonant topologies. Designed for industrial, automotive, power management and manufacturing applications.
This Infineon product is well-suited for use in industrial equipment, HVAC systems, motor controllers, and power supply applications requiring high voltage and current MOSFET components. EnvMart offers this advanced semiconductor device to engineers and designers seeking reliable, efficient, and compact MOSFET solutions.
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