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Infineon 600V CoolMOS CFD7 N-Channel MOSFET, 63 A, 600 V, 3-Pin TO-247 IPW60R031CFD7XKSA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 21.1mm
Length 16.13mm
Model IPW60R031CFD7XKSA1
Width 5.21mm
Mount Type Through Hole
Series 600V CoolMOS CFD7
Maximum Operating Temperature 150°C
Package Type TO-247
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 63A
Maximum Drain Source Voltage Vds 600V
Maximum Drain Source Resistance Rds 31mΩ
Maximum Power Dissipation Pd 278W
Typical Gate Charge Qg @ Vgs 141nC
Maximum Gate Source Voltage Vgs 4.5V
Forward Voltage Vf 1V

Key Features

  • Features reduced gate charge of 141 nC at Vgs, enhancing switching efficiency.
  • Includes integrated fast body diode with improved turn-off behavior.
  • Maximum power dissipation of 278 watts ensures robust operation.
  • Wide operating temperature range from -55°C to 150°C for reliability.
  • Low maximum drain source resistance of 31 milliohms reduces conduction losses.
  • Compact dimensions with height 21.1 mm, length 16.13 mm, and width 5.21 mm.
  • Provides best-in-class hard commutation ruggedness for resonant topologies.
  • Designed for through-hole mounting with 3 pins for easy PCB integration.

Product Description

Infineon IPW60R031CFD7XKSA1 is a 600V CoolMOS CFD7 series N-Channel MOSFET designed for high-efficiency power switching applications. It delivers a maximum continuous drain current of 63 A and withstands a drain source voltage of up to 600 V. Packaged in a robust 3-pin TO-247 housing, it supports through-hole mounting typical in industrial and power electronics designs.

This MOSFET features an integrated fast body diode and reduced typical gate charge of 141 nC at Vgs, which contributes to improved switching speeds and lower power losses. The device offers excellent turn-off behavior and a reverse recovery charge significantly lower compared to competitors, enhancing system efficiency and thermal performance.

With a maximum power dissipation rating of 278 watts and an operating temperature range from -55°C to 150°C, this component ensures reliable performance under harsh conditions commonly found in industrial, automotive, and power management environments. The maximum drain source resistance of 31 mΩ further supports low conduction losses, improving energy efficiency.

Physical dimensions of 21.1 mm height, 16.13 mm length, and 5.21 mm width make it suitable for compact circuit designs. It is optimized for resonant topologies, offering best-in-class hard commutation ruggedness, making it ideal for advanced motor drive, power conversion, and inverter applications.

Features reduced gate charge of 141 nC at Vgs, enhancing switching efficiency. Includes integrated fast body diode with improved turn-off behavior. Maximum power dissipation of 278 watts ensures robust operation. Wide operating temperature range from -55°C to 150°C for reliability.

Low maximum drain source resistance of 31 milliohms reduces conduction losses. Compact TO-247 3-pin package supports through-hole mounting. Best-in-class hard commutation ruggedness for resonant topologies. Designed for industrial, automotive, power management and manufacturing applications.

This Infineon product is well-suited for use in industrial equipment, HVAC systems, motor controllers, and power supply applications requiring high voltage and current MOSFET components. EnvMart offers this advanced semiconductor device to engineers and designers seeking reliable, efficient, and compact MOSFET solutions.

Infineon 600V CoolMOS CFD7 N-Channel MOSFET, 63 A, 600 V, 3-Pin TO-247 IPW60R031CFD7XKSA1
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Frequently Asked Questions

The maximum continuous drain current for this model is 63 A.

It can withstand a maximum drain source voltage of 600 V.

The typical gate charge at Vgs is 141 nC.

The maximum power dissipation rating is 278 watts.

The operating temperature range is from -55°C to 150°C.

The dimensions are 21.1 mm in height, 16.13 mm in length, and 5.21 mm in width.

It supports through-hole mounting with a 3-pin configuration.

The maximum drain source resistance is 31 milliohms.

This MOSFET is designed for industrial, automotive, power management, and manufacturing applications.

Yes, it includes an integrated fast body diode with improved turn-off behavior.

It belongs to the 600V CoolMOS CFD7 series.

The channel type of this model is N-channel.

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