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Infineon CoolMOS C7 N-Channel MOSFET 46 A, 700 V Enhancement Mode, 3-Pin TO-220 IPP65R045C7XKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 15.95mm |
| Length | 10.36mm |
| Model | IPP65R045C7XKSA1 |
| Width | 4.57mm |
| Mount Type | Through Hole |
| Series | CoolMOS C7 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 46A |
| Maximum Drain Source Voltage Vds | 700V |
| Maximum Drain Source Resistance Rds | 45mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 227W |
| Typical Gate Charge Qg @ Vgs | 93nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 0.9V |
Key Features
- Maximum continuous drain current of 46 A ensures high current handling capacity.
- 700 V maximum drain-source voltage suitable for high-voltage applications.
- Compact TO-220 through-hole package with 3 pins for robust mounting.
- Low drain-source resistance of 45 mΩ minimizes conduction losses.
- Supports a maximum power dissipation of 227 W for reliable operation.
- Wide operating temperature range from −55°C to 150°C adapts to harsh environments.
- Enhancement mode channel provides efficient switching characteristics.
- Typical gate charge of 93 nC allows fast switching speeds.
Product Description
Infineon IPP65R045C7XKSA1 is a CoolMOS C7 Series N-Channel MOSFET designed for high efficiency power conversion applications. Featuring a maximum continuous drain current of 46 A and a high voltage rating of 700 V, it supports demanding electrical loads reliably.
The device is housed in a three-pin TO-220 package suitable for through-hole mounting, ensuring robustness and ease of integration in industrial electronics and power supply circuits. It exhibits low drain-source resistance of 45 mΩ which reduces conduction losses, improving overall system efficiency.
Operating conditions range from a minimum temperature of −55°C up to a maximum of 150°C, making it suitable for automotive, industrial, and high-temperature environments. The enhancement mode operation and typical gate charge of 93 nC allows for fast switching performance, ideal for state-of-the-art power management solutions.
Its voltage rating includes ±30 V maximum gate-source voltage, safeguarding the gate dielectrics during operation. Infineon's CoolMOS C7 technology offers improved switching speed and low loss operation compared to traditional MOSFETs.
Maximum continuous drain current of 46 A. 700 V maximum drain-source voltage. TO-220 package with through-hole mount. Low Rds(on) of 45 mΩ for efficiency. Power dissipation up to 227 W. Operating temperature from −55°C to 150°C.
Enhancement mode channel. Gate charge typical 93 nC. Gate-source voltage rating of ±30 V. Forward voltage 0.9 V.
This MOSFET is primarily used in industrial power supplies, motor controls, and other power electronics requiring efficient switching and durability. It is suitable for applications in automotive electronics, manufacturing equipment, HVAC systems, and renewable energy inverters.
Discover more high-performance MOSFETs by exploring the Infineon CoolMOS product range at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 46 A, allowing it to handle high current loads effectively.
This MOSFET has a maximum drain-source voltage rating of 700 V, making it suitable for high-voltage applications.
It is housed in a TO-220 package, which is designed for through-hole mounting, ensuring robust integration into circuits.
The drain-source resistance (Rds(on)) is 45 mΩ, which helps minimize conduction losses during operation.
It supports a maximum power dissipation of 227 W, allowing for reliable operation under demanding conditions.
The operating temperature range is from -55°C to 150°C, making it suitable for various environments, including harsh conditions.
The typical gate charge is 93 nC, which enables fast switching speeds in power management applications.
The forward voltage is 0.9 V, which is relevant for understanding its conduction characteristics.
The maximum gate-source voltage rating is ±30 V, which protects the gate dielectrics during operation.
It features an N-channel type with enhancement mode operation, providing efficient switching characteristics.
The dimensions are 15.95 mm in height, 10.36 mm in length, and 4.57 mm in width, allowing for compact integration.
This model is primarily used in industrial power supplies, motor controls, automotive electronics, and renewable energy inverters.
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