Nexperia N-Channel MOSFET 100 A 30 V Enhancement 3-Pin TO-220 PSMN1R8-30PL,127

Nexperia PSMN1R8-30PL,127 is an N-Channel MOSFET designed for high power semiconductor applications requiring efficient switching and conduction capabilities. Supporting a continuous drain current of up to 100 amperes and a maximum drain-source voltage of 30 volts, this device operates in enhancement mode with low on-resistance, making it suitable for power management and motor control circuits.

The transistor comes in a robust 3-pin TO-220 package that facilitates through-hole mounting and excellent thermal management. It is engineered to operate safely across a wide temperature range from -55°C to 175°C, addressing industrial and commercial electronics environments.

Key electrical features include a typical gate charge of 170 nC, forward voltage of 0.7 V, and a maximum power dissipation of 270 W, ensuring efficient performance in demanding switching applications.

Mechanical dimensions are compact with 16 mm height, 10.3 mm length, and 4.7 mm width, compatible with various PCB layouts and heatsinking options.

The product is manufactured in the Philippines and does not carry automotive or special industry certifications, focusing instead on broad applicability in consumer and industrial electronics.

Maximum continuous drain current of 100 A for high current applications. Low Rds(on) of 1.8 mΩ reduces conduction losses. High power dissipation capacity at 270 W ensures reliable operation. Wide operating temperature from -55°C to 175°C enhances durability.

Robust TO-220 through-hole package for easy installation and heat transfer. Gate-source voltage tolerance up to ±20 V ensures gate protection.

This MOSFET is ideal for industrial, laboratory, manufacturing, and power supply applications requiring high efficiency and reliability. Explore a wide range of semiconductor and electronic components at EnvMart for your project needs.