Nexperia N-Channel MOSFET 100 A, 40 V, Enhancement Mode, 3-Pin TO-220 PSMN4R5-40PS,127

Nexperia PSMN4R5-40PS,127 is a high-performance N-Channel MOSFET suited for power switching applications requiring continuous drain currents up to 100 A and drain-source voltages of 40 V. This device incorporates an enhancement mode channel in a durable TO-220 through-hole package with three pins.

Its robust build supports a maximum power dissipation of 148 W, ensuring efficient heat handling in industrial and commercial electronic circuits. The maximum gate-source voltage rating of -20 to +20 V provides reliable control and switching precision.

This MOSFET operates across a wide temperature range (-55°C to 175°C), making it well suited for demanding environments such as HVAC systems, power supplies, motor control, and industrial automation.

The low maximum drain-source resistance of 4.6 mΩ reduces conduction losses and improves overall circuit efficiency. Typical gate charge of 42.3 nC ensures quick switching times facilitating high-frequency operations.

The device’s compact form factor (10.3 mm length, 4.7 mm width, and 16 mm height) allows versatile PCB design and mounting flexibility in through-hole applications. This MOSFET offers high current capacity and low on-resistance for power electronics.

Enhanced switching speeds ensure efficiency in industrial and consumer devices. Reliable operation over broad temperature conditions increases device longevity. Suitable for use in power supply units, motor drivers, and load switches.

Easy installation with its standard TO-220 through-hole package design. Ideal for applications requiring robust discrete semiconductor solutions. Choose Nexperia PSMN4R5-40PS,127 for solid state switching performance in industrial, laboratory, and commercial electronic applications.

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