Nexperia P-Channel MOSFET 3-Pin SC-70 200mA 30V Enhancement Mode NX3008PBKW,115

Nexperia NX3008PBKW,115 is a P-Channel MOSFET transistor in a 3-pin SC-70 surface mount package designed for low power and compact electronic circuits. It offers a continuous drain current of 200 mA and can handle a maximum drain-source voltage of 30 V, operating in enhancement channel mode.

This device features low drain-source resistance (6.5 Ω max) for improved efficiency and is compliant with the automotive standard AEC-Q101, assuring robust performance in automotive applications.

The MOSFET operates over a wide temperature range from -55°C to a maximum of 150°C, making it suitable for applications exposed to harsh environments. Its small physical size with dimensions of 2.2 mm length, 1.35 mm width, and 1 mm height enables dense PCB designs.

Maximum power dissipation is rated at 830 mW, appropriate for various industrial, automotive, and consumer electronic applications where compact, efficient switching is required. This MOSFET features a 3-pin SC-70 surface mount package.

Maximum continuous drain current is 200 mA. Drain-source voltage capability of 30 V. Low Rds(on) of 6.5 Ω ensures efficiency. Automotive standard AEC-Q101 qualification. Operating temperature range from -55°C to 150°C. Compact dimensions suited for small footprints.

Typical gate charge of 0.55 nC at Vgs. Supports gate-source voltages from -8 V to +8 V. Maximum power dissipation of 830 mW.

This P-Channel MOSFET is ideal for automotive, industrial, and general-purpose electronic circuits including power management, signal switching, and amplification. Its surface mount design improves manufacturing efficiency and integration into modern PCB assemblies.

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