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STMicroelectronics STripFET N-Channel MOSFET 80 A 120 V Enhancement 3-Pin TO-220 STP80NF12

Category MOSFET Brand STMicroelectronics Condition New

Specifications

Country of Origin India
Brand STMicroelectronics
Height 15.75mm
Length 10.4mm
Model STP80NF12
Width 4.6mm
Mount Type Through Hole
Series STripFET
Maximum Operating Temperature 175°C
Package Type TO-220
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 80A
Maximum Drain Source Voltage Vds 120V
Maximum Drain Source Resistance Rds 18mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 300W
Typical Gate Charge Qg @ Vgs 140nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.3V

Key Features

  • Features an enhancement channel mode for efficient switching performance.
  • Offers low maximum drain-source resistance of 18 milliohms for minimal conduction losses.
  • Typical gate charge of 140 nanocoulombs at gate-source voltage ensures fast switching.
  • Operates reliably from -55°C up to a maximum temperature of 175°C.
  • Supports high power dissipation up to 300 watts for demanding applications.
  • Compact dimensions with height 15.75 mm, length 10.4 mm, and width 4.6 mm.
  • Designed for through-hole mounting in power electronics circuits.
  • Complies with RoHS, but no additional certifications or automotive approvals.

Product Description

STMicroelectronics STP80NF12 is an N-Channel enhancement mode MOSFET designed for high-power switching applications. It supports a maximum continuous drain current of 80 amperes and a maximum drain-source voltage of 120 volts, making it suitable for a wide range of power management and conversion circuits.

The device comes in a robust TO-220 package with three pins, optimized for through-hole mounting. This package provides efficient heat dissipation, supporting a maximum power dissipation of 300 watts under maximum operating conditions. The MOSFET's low on-resistance of 18 milliohms minimizes conduction losses, improving overall circuit efficiency.

The typical gate charge of 140 nanocoulombs at a gate voltage of 10 V allows for rapid switching speeds, important in high-frequency power applications. Its wide operating temperature range from -55 °C to 175 °C ensures reliability in demanding industrial and automotive environments.

The compact form factor with dimensions 15.75 mm in height, 10.4 mm length, and 4.6 mm width facilitates easy PCB integration without occupying excessive space. This makes it an excellent choice for power supply units, motor controllers, DC-DC converters, and other power electronics systems.

The STP80NF12 MOSFET is lead-free and RoHS compliant, adhering to environmental safety standards. Although it lacks specific automotive certifications, its rugged design makes it suitable for commercial and industrial applications.

Features an enhancement channel mode for efficient switching performance. Offers low maximum drain-source resistance of 18 milliohms for minimal conduction losses. Typical gate charge of 140 nanocoulombs at gate-source voltage ensures fast switching.

Operates reliably from -55°C up to a maximum temperature of 175°C. Supports high power dissipation up to 300 watts for demanding applications. Compact dimensions with height 15.75 mm, length 10.4 mm, and width 4.6 mm. Designed for through-hole mounting in power electronics circuits.

Complies with RoHS, but no additional certifications or automotive approvals.

This MOSFET is ideal for use in industrial, manufacturing, and electronics design and repair, including power supplies, amplification, and switching applications. Engineers and technicians rely on STMicroelectronics components for their performance and reliability in critical systems.

Explore our Electronics & Electricals category for more high-quality semiconductor components from STMicroelectronics and other leading brands on EnvMart.

STMicroelectronics STripFET N-Channel MOSFET 80 A 120 V Enhancement 3-Pin TO-220 STP80NF12
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Frequently Asked Questions

The maximum continuous drain current for this MOSFET is 80 amperes.

The maximum drain-source voltage rating is 120 volts.

This model has dimensions of 15.75 mm in height, 10.4 mm in length, and 4.6 mm in width.

It supports a maximum power dissipation of 300 watts.

The typical gate charge at a gate-source voltage of 10 V is 140 nanocoulombs.

The operating temperature range is from -55°C to a maximum of 175°C.

This model comes in a TO-220 package designed for through-hole mounting.

The maximum drain-source resistance is 18 milliohms.

It features an N-channel enhancement mode for efficient switching performance.

This MOSFET has a pin count of 3.

Yes, the STP80NF12 complies with RoHS standards.

It is suitable for high-power switching applications, including power supply units, motor controllers, and DC-DC converters.

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