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| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 15.75mm |
| Length | 10.4mm |
| Model | STP80NF12 |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | STripFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 80A |
| Maximum Drain Source Voltage Vds | 120V |
| Maximum Drain Source Resistance Rds | 18mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 300W |
| Typical Gate Charge Qg @ Vgs | 140nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.3V |
STMicroelectronics STP80NF12 is an N-Channel enhancement mode MOSFET designed for high-power switching applications. It supports a maximum continuous drain current of 80 amperes and a maximum drain-source voltage of 120 volts, making it suitable for a wide range of power management and conversion circuits.
The device comes in a robust TO-220 package with three pins, optimized for through-hole mounting. This package provides efficient heat dissipation, supporting a maximum power dissipation of 300 watts under maximum operating conditions. The MOSFET's low on-resistance of 18 milliohms minimizes conduction losses, improving overall circuit efficiency.
The typical gate charge of 140 nanocoulombs at a gate voltage of 10 V allows for rapid switching speeds, important in high-frequency power applications. Its wide operating temperature range from -55 °C to 175 °C ensures reliability in demanding industrial and automotive environments.
The compact form factor with dimensions 15.75 mm in height, 10.4 mm length, and 4.6 mm width facilitates easy PCB integration without occupying excessive space. This makes it an excellent choice for power supply units, motor controllers, DC-DC converters, and other power electronics systems.
The STP80NF12 MOSFET is lead-free and RoHS compliant, adhering to environmental safety standards. Although it lacks specific automotive certifications, its rugged design makes it suitable for commercial and industrial applications.
Features an enhancement channel mode for efficient switching performance. Offers low maximum drain-source resistance of 18 milliohms for minimal conduction losses. Typical gate charge of 140 nanocoulombs at gate-source voltage ensures fast switching.
Operates reliably from -55°C up to a maximum temperature of 175°C. Supports high power dissipation up to 300 watts for demanding applications. Compact dimensions with height 15.75 mm, length 10.4 mm, and width 4.6 mm. Designed for through-hole mounting in power electronics circuits.
Complies with RoHS, but no additional certifications or automotive approvals.
This MOSFET is ideal for use in industrial, manufacturing, and electronics design and repair, including power supplies, amplification, and switching applications. Engineers and technicians rely on STMicroelectronics components for their performance and reliability in critical systems.
Explore our Electronics & Electricals category for more high-quality semiconductor components from STMicroelectronics and other leading brands on EnvMart.
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