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Nexperia PNP Transistor , Maximum Collector Current 100 mA, Maximum Collector Emitter Voltage 45 V, 3-Pin SOT-23 BC860B,215

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin China
Brand Nexperia
Height 1.1mm
Length 3mm
Model BC860B,215
Width 2.5mm
Mount Type Surface
Series BC860
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -65°C
Standards/Approvals RoHS
Pin Count 3
Maximum Collector Emitter Voltage Vceo -45V
Minimum DC Current Gain hFE 220
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -5V
Maximum Collector Base Voltage VCBO -50V
Maximum Power Dissipation Pd 250mW
Maximum DC Collector Current Idc -100mA
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz

Key Features

  • Supports a maximum DC collector current of 100 mA for moderate power applications.
  • Maximum collector emitter voltage rating of 45 V ensures safe operation within limits.
  • Equipped with a surface mount SOT-23 package for space-saving PCB designs.
  • Features a minimum DC current gain (hFE) of 220 for efficient amplification.
  • Operational temperature range from -65°C to 150°C for versatile environmental usability.
  • Maximum power dissipation of 250 mW suitable for general purpose PNP applications.
  • Maximum transition frequency of 100 MHz supports switching at high speeds.
  • Compliant with RoHS standards ensuring environmental safety and regulatory compliance.

Product Description

Nexperia BC860B,215 PNP Transistor is a general-purpose bipolar transistor designed for applications requiring moderate current and voltage handling capabilities. Packaged in a compact 3-Pin SOT-23 surface mount package, it optimizes board space while ensuring robust electrical performance.

This transistor supports a maximum DC collector current of 100 mA and a maximum collector emitter voltage of 45 V, making it suitable for switching, amplification, and signal processing in industrial, electronic, and communications equipment.

The device features a minimum DC current gain (hFE) of 220 and a maximum power dissipation capability of 250 mW, supporting efficient operation in varied electronic circuits. Its maximum transition frequency of 100 MHz allows for high-speed switching applications.

Designed to meet RoHS compliance, the BC860B,215 ensures environmental safety and meets global regulatory standards. The operational temperature range from -65°C to 150°C supports functionality in diverse climatic conditions.

The physical dimensions of 3 mm length, 2.5 mm width, and 1.1 mm height enable compact electronic designs particularly useful in automotive, industrial control, and consumer electronics sectors.

Supports a maximum DC collector current of 100 mA for moderate power applications. Maximum collector emitter voltage rating of 45 V ensures safe operation within limits. Equipped with a surface mount SOT-23 package for space-saving PCB designs.

Features a minimum DC current gain (hFE) of 220 for efficient amplification. Operational temperature range from -65°C to 150°C for versatile environmental usability. Maximum power dissipation of 250 mW suitable for general purpose uses.

High transition frequency of 100 MHz suitable for switching circuits. RoHS compliant ensuring environmental and regulatory adherence. Compact dimensions facilitate integration into space-constrained PCBs. Manufactured in China with verified quality assurance.

Nexperia’s BC860B,215 is ideal for industrial, consumer electronics, communication equipment, and various electronic circuit designs requiring reliable PNP transistor performance. Explore more semiconductor and transistor options in the Electronics & Electricals category on EnvMart.

Explore more products in our Bipolar Transistors category.

Nexperia PNP Transistor , Maximum Collector Current 100 mA, Maximum Collector Emitter Voltage 45 V, 3-Pin SOT-23 BC860B,215
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Frequently Asked Questions

The BC860B,215 transistor supports a maximum DC collector current of 100 mA, suitable for moderate power applications.

This model has a maximum collector emitter voltage rating of 45 V, ensuring safe operation within specified limits.

It operates within an environmental temperature range from -65°C to 150°C, allowing for versatile usability in various conditions.

The transistor is packaged in a compact 3-Pin SOT-23 surface mount package, which is designed for space-saving PCB designs.

The BC860B,215 features a minimum DC current gain (hFE) of 220, which supports efficient amplification in electronic circuits.

It has a maximum power dissipation capability of 250 mW, making it suitable for general purpose PNP applications.

This model supports a maximum transition frequency of 100 MHz, which is suitable for high-speed switching applications.

The physical dimensions of this transistor are 3 mm in length, 2.5 mm in width, and 1.1 mm in height.

Yes, it is compliant with RoHS standards, ensuring environmental safety and regulatory compliance.

It is a PNP bipolar transistor, designed for applications requiring moderate current and voltage handling capabilities.

The maximum emitter base voltage (VEBO) for the BC860B,215 is -5 V.

This transistor is suitable for switching, amplification, and signal processing in industrial, electronic, and communications equipment.

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