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Infineon OptiMOS 3 N-Channel MOSFET 80A 100V Enhancement 3-Pin TO-220 IPP072N10N3GXKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 4.57mm |
| Length | 10.36mm |
| Model | IPP072N10N3GXKSA1 |
| Width | 15.95mm |
| Mount Type | Through Hole |
| Series | OptiMOS 3 |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 80A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 7.2mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 150W |
| Typical Gate Charge Qg @ Vgs | 51nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
Key Features
- The device operates with a maximum drain-source resistance of 7.2mΩ for efficient conduction.
- Maximum gate-source voltage tolerance of -20V to +20V ensures robustness in switching applications.
- Power dissipation up to 150W enables high power handling capacity.
- Operates reliably within a temperature range from -55°C to 175°C.
- Compact dimensions of 15.95mm width, 10.36mm length, and 4.57mm height suitable for through-hole mounting.
- Typical gate charge of 51nC at specified gate voltage promotes fast switching speeds.
- Forward voltage of 1.2V supports efficient electrical performance.
- Designed for through-hole mounting in power electronic circuits requiring high efficiency.
Product Description
Infineon IPP072N10N3GXKSA1 is an OptiMOS 3 series N-Channel MOSFET designed for power electronics applications requiring high efficiency and robust operation.
This 3-pin TO-220 package device supports a maximum continuous drain current of 80A and a maximum drain-source voltage of 100V, making it suitable for various industrial, electronic, and power management applications.
Featuring an enhancement mode channel with a low maximum drain-source resistance of 7.2mΩ, this MOSFET ensures efficient conduction and reduced power losses.
The device tolerates a gate-source voltage range from -20V to +20V and operates reliably in harsh temperature conditions from -55°C to 175°C, providing durability and stability for demanding environments.
Compact physical dimensions with a width of 15.95mm, length of 10.36mm, and height of 4.57mm facilitate easy integration into through-hole PCB designs. The typical gate charge of 51nC at the specified gate voltage enables fast switching performance, and the forward voltage of 1.2V supports efficient electrical characteristics.
While not automotive qualified, this MOSFET fits a broad range of industrial and commercial power electronics use cases including power supplies, converters, and motor drives. The device operates with a maximum drain-source resistance of 7.2mΩ for efficient conduction.
Maximum gate-source voltage tolerance of -20V to +20V ensures robustness in switching applications. Power dissipation up to 150W enables high power handling capacity. Operates reliably within a temperature range from -55°C to 175°C.
Compact dimensions of 15.95mm width, 10.36mm length, and 4.57mm height suitable for through-hole mounting. Typical gate charge of 51nC at specified gate voltage promotes fast switching speeds. Forward voltage of 1.2V supports efficient electrical performance.
Designed for through-hole mounting in power electronic circuits requiring high efficiency. Non-automotive standard device, ideal for industrial and commercial electronics. Infineon OptiMOS 3 series delivers best-in-class performance with enhanced power density and cost efficiency.
This MOSFET is an excellent choice for engineers seeking a reliable, high-performance power transistor for industrial, laboratory, and manufacturing equipment where power efficiency and thermal reliability are critical.
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Frequently Asked Questions
The maximum continuous drain current for this model is 80A.
This MOSFET has a maximum drain-source voltage rating of 100V.
It operates with a maximum drain-source resistance of 7.2mΩ, ensuring efficient conduction.
The device operates reliably within a temperature range from -55°C to 175°C.
The dimensions of this unit are 15.95mm in width, 10.36mm in length, and 4.57mm in height.
The typical gate charge at the specified gate voltage is 51nC.
The forward voltage for this MOSFET is 1.2V.
This model can handle a maximum power dissipation of up to 150W.
It is designed for through-hole mounting in power electronic circuits.
The maximum gate-source voltage tolerance for this MOSFET is -20V to +20V.
This device features an N-channel type configuration.
No, this MOSFET is not automotive qualified but is suitable for various industrial and commercial applications.
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