Infineon CoolMOS C6 N-Channel MOSFET 10.6 A 650 V Enhancement 3-Pin TO-252 IPD60R380C6ATMA1

Infineon IPD60R380C6ATMA1 CoolMOS C6 series N-channel Enhancement MOSFET is designed for efficient power switching applications requiring high current and voltage ratings. Operating at a continuous drain current of 10.6 A and a drain-source voltage rating of 650 V, this device supports industrial, automotive, and power management uses with reliable performance.

The MOSFET features a compact TO-252 3-pin package optimized for surface mount technology, allowing for efficient space usage and easy PCB assembly. Its minimum operating temperature of -55°C and maximum operating temperature of 150°C ensure functionality in harsh environmental conditions.

With a low maximum Rds(on) of 380 milliohms, the device reduces conduction losses significantly, improving overall efficiency. The gate-source voltage range from -20 V to +20 V provides robust gate control with a typical gate charge of 32 nC enabling fast switching and minimal losses.

This CoolMOS C6 device is well-suited for applications including power supplies, motor drives, electronic lighting ballasts, and industrial power systems. Its high power dissipation rating of 83 W supports demanding thermal environments.

This MOSFET delivers excellent switching performance and durability. Compact size supports high-density circuit designs. Robust voltage and current specifications support diverse industrial applications. Low gate charge enables efficient high-speed switching.

Surface mount TO-252 package simplifies automated assembly. Wide operating temperature range suits automotive and industrial use. Infineon's CoolMOS technology maximizes efficiency and power density.

For engineers and procurement specialists, this is a reliable component for power management and semiconductor solutions. Explore more Infineon semiconductors and MOSFET offerings at EnvMart to optimize your design and performance needs.