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Infineon CoolMOS C3 N-Channel MOSFET 800 V, 17 A, Enhancement Mode, 3-Pin TO-247 SPW17N80C3FKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 21.1mm |
| Length | 16.13mm |
| Model | SPW17N80C3FKSA1 |
| Width | 5.21mm |
| Mount Type | Through Hole |
| Series | CoolMOS C3 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 17A |
| Maximum Drain Source Voltage Vds | 800V |
| Maximum Drain Source Resistance Rds | 290mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 227W |
| Typical Gate Charge Qg @ Vgs | 88nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
Key Features
- This enhancement mode MOSFET features CoolMOS C3 series technology for high efficiency.
- Comes with three pins designed for through-hole mounting.
- Maximum drain-source resistance is 290 milliohms for reliable operation.
- Supports maximum power dissipation of 227 watts for demanding applications.
- Operating temperature ranges from -55°C to 150°C enabling robust performance.
- Maximum gate-source voltage is ±20 V, providing stable gate control.
- Forward voltage is 1.2 volts under typical conditions.
Product Description
Infineon SPW17N80C3FKSA1 is a CoolMOS C3 N-Channel MOSFET designed for power electronics applications requiring high efficiency and reliability. It is housed in a durable 3-pin TO-247 through-hole package, facilitating easy mounting and excellent thermal management.
This transistor supports a maximum continuous drain current of 17 amperes and withstands drain-source voltages up to 800 volts, making it suitable for use in power supplies, industrial controls, and inverter circuits.
The device operates in enhancement mode, offering a maximum drain-source resistance (Rds) of 290 milliohms, which ensures minimal conduction loss and improved energy efficiency. It can dissipate up to 227 watts of power, allowing operation under high load conditions.
The MOSFET is rated for a gate-source voltage of ±20 volts, with a typical forward voltage of 1.2 volts. It reliably operates in environments ranging from -55°C to 150°C, thereby accommodating a wide range of industrial and commercial temperature requirements.
The compact dimensions (16.13 mm length, 5.21 mm width, and 21.1 mm height) and through-hole mounting style make it accessible for various PCB layouts and assembly processes. This CoolMOS C3 N-Channel MOSFET is engineered for industrial, power management, and electronic control applications.
Its advanced CoolMOS C3 technology increases efficiency and power density. Ideal for use in power converters, motor drives, and switch-mode power supplies. Three-pin TO-247 package supports robust mechanical mounting and heat dissipation.
Wide operating temperature range suitable for harsh environments. Low on-resistance reduces energy loss and heat generation. Explore more Infineon electronic components and power semiconductor devices on EnvMart to enhance your power efficiency projects and industrial designs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 17 amperes.
This MOSFET can withstand a maximum drain-source voltage of 800 volts.
It is housed in a TO-247 package type, designed for through-hole mounting.
The device supports a maximum power dissipation of 227 watts.
It operates within a temperature range of -55°C to 150°C.
The maximum gate-source voltage for this MOSFET is ±20 volts.
The typical forward voltage is 1.2 volts under normal operating conditions.
The maximum drain-source resistance (Rds) is 290 milliohms.
The dimensions are 16.13 mm in length, 5.21 mm in width, and 21.1 mm in height.
It features an N-channel type, operating in enhancement mode.
The typical gate charge (Qg) at Vgs is 88 nanocoulombs.
It is suitable for power supplies, industrial controls, and inverter circuits.
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