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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 21.1mm |
| Length | 16.13mm |
| Model | SPW11N80C3FKSA1 |
| Width | 5.16mm |
| Mount Type | Through Hole |
| Series | CoolMOS C3 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 11A |
| Maximum Drain Source Voltage Vds | 800V |
| Maximum Drain Source Resistance Rds | 450mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 156W |
| Typical Gate Charge Qg @ Vgs | 64nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Infineon SPW11N80C3FKSA1 CoolMOS C3 is a high-performance N-Channel MOSFET designed for power electronics applications requiring efficient switching and thermal management. This MOSFET features an enhancement mode channel and supports a continuous drain current of 11 A with a maximum drain source voltage of 800 V, suited for industrial and power management use cases.
The device's TO-247 package provides a robust through-hole mount capable of dissipating up to 156 W of power, making it reliable for high-power circuits. Its low on-resistance of 450 milliohms reduces conduction losses and improves energy efficiency, critical for power converters, motor drives, and power supplies.
The MOSFET operates safely within a temperature range from -55°C up to 150°C, accommodating harsh environments often encountered in manufacturing, HVAC, and industrial automation. The typical gate charge of 64 nC supports rapid switching capabilities, enabling high-frequency operation and improved system performance.
Physical size dimensions (16.13 mm length, 5.16 mm width, and 21.1 mm height) facilitate design integration in compact circuit architectures. The three-pin TO-247 configuration simplifies system assembly and maintenance.
This device does not have automotive qualification or specific compliance approvals but is optimized for electrical and electronic component applications in industrial and commercial sectors.
Designed with enhancement channel mode for efficient switching performance. Features a low maximum drain source resistance of 450 milliohms for reduced power dissipation. Capable of dissipating up to 156 watts of power for robust operation.
Operating temperature range from -55°C to 150°C suitable for demanding environments. Typical gate charge of 64 nanocoulombs at Vgs, ensuring fast switching speeds. Maximum gate source voltage rated at 20 volts for device safety.
Physical dimensions: length 16.13 mm, width 5.16 mm, and height 21.1 mm. Three-pin configuration for easy through-hole mounting and integration. Ideal for use in industrial, power electronics, manufacturing, and HVAC applications.
Explore the Infineon range and other discrete semiconductors in the Electronics & Electricals category at EnvMart for tailored power and control solutions.
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