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Infineon CoolMOS C3 N-Channel MOSFET 11 A Continuous Drain Current 800 V Vds 156 W Pd TO-247 Package SPW11N80C3FKSA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 21.1mm
Length 16.13mm
Model SPW11N80C3FKSA1
Width 5.16mm
Mount Type Through Hole
Series CoolMOS C3
Maximum Operating Temperature 150°C
Package Type TO-247
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 11A
Maximum Drain Source Voltage Vds 800V
Maximum Drain Source Resistance Rds 450mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 156W
Typical Gate Charge Qg @ Vgs 64nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1.2V

Key Features

  • Designed with enhancement channel mode for efficient switching performance.
  • Features a low maximum drain source resistance of 450 milliohms for reduced power dissipation.
  • Capable of dissipating up to 156 watts of power for robust operation.
  • Operating temperature range from -55°C to 150°C suitable for demanding environments.
  • Typical gate charge of 64 nanocoulombs at Vgs, ensuring fast switching speeds.
  • Maximum gate source voltage rated at 20 volts for device safety.
  • Three-pin configuration for easy through-hole mounting and integration.
  • Ideal for use in industrial, power electronics, manufacturing, and HVAC applications.

Product Description

Infineon SPW11N80C3FKSA1 CoolMOS C3 is a high-performance N-Channel MOSFET designed for power electronics applications requiring efficient switching and thermal management. This MOSFET features an enhancement mode channel and supports a continuous drain current of 11 A with a maximum drain source voltage of 800 V, suited for industrial and power management use cases.

The device's TO-247 package provides a robust through-hole mount capable of dissipating up to 156 W of power, making it reliable for high-power circuits. Its low on-resistance of 450 milliohms reduces conduction losses and improves energy efficiency, critical for power converters, motor drives, and power supplies.

The MOSFET operates safely within a temperature range from -55°C up to 150°C, accommodating harsh environments often encountered in manufacturing, HVAC, and industrial automation. The typical gate charge of 64 nC supports rapid switching capabilities, enabling high-frequency operation and improved system performance.

Physical size dimensions (16.13 mm length, 5.16 mm width, and 21.1 mm height) facilitate design integration in compact circuit architectures. The three-pin TO-247 configuration simplifies system assembly and maintenance.

This device does not have automotive qualification or specific compliance approvals but is optimized for electrical and electronic component applications in industrial and commercial sectors.

Designed with enhancement channel mode for efficient switching performance. Features a low maximum drain source resistance of 450 milliohms for reduced power dissipation. Capable of dissipating up to 156 watts of power for robust operation.

Operating temperature range from -55°C to 150°C suitable for demanding environments. Typical gate charge of 64 nanocoulombs at Vgs, ensuring fast switching speeds. Maximum gate source voltage rated at 20 volts for device safety.

Physical dimensions: length 16.13 mm, width 5.16 mm, and height 21.1 mm. Three-pin configuration for easy through-hole mounting and integration. Ideal for use in industrial, power electronics, manufacturing, and HVAC applications.

Explore the Infineon range and other discrete semiconductors in the Electronics & Electricals category at EnvMart for tailored power and control solutions.

Infineon CoolMOS C3 N-Channel MOSFET 11 A Continuous Drain Current 800 V Vds 156 W Pd TO-247 Package SPW11N80C3FKSA1
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Frequently Asked Questions

The maximum continuous drain current for this model is 11 A.

It can handle a maximum drain source voltage of 800 V.

This MOSFET is capable of dissipating up to 156 watts of power.

The typical gate charge at Vgs is 64 nanocoulombs.

The operating temperature range is from -55°C to 150°C.

The maximum gate source voltage is rated at 20 volts.

The dimensions are 16.13 mm in length, 5.16 mm in width, and 21.1 mm in height.

It supports through-hole mounting with a three-pin configuration.

The maximum drain source resistance is 450 milliohms.

It is ideal for use in industrial, power electronics, manufacturing, and HVAC applications.

This model utilizes an N-channel type.

It belongs to the CoolMOS C3 series.

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