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onsemi N-Channel Power MOSFET 3.2A Drain Current 20V Drain-Source Voltage Surface Mount SOT-23 Package NTR4501NT1G
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 940μm |
| Length | 2.9mm |
| Model | NTR4501NT1G |
| Width | 1.3mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 3.2A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 80mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.25W |
| Typical Gate Charge Qg @ Vgs | 2.4nC |
| Maximum Gate Source Voltage Vgs | -12, +12V |
| Forward Voltage Vf | 800mV |
| DiodesZetex N-Channel MOSFET, 1.7 A, 20 V Enhancement, 3-Pin SOT-23Brand | DiodesZetex |
Key Features
- Designed for surface-mount applications in compact SOT-23 package.
- Features low drain source resistance of 80 milliohms for efficient switching.
- High power dissipation rating of 1.25 W supports robust operation.
- Wide operating temperature range from -55°C to 150°C ensures reliability in harsh environments.
- Enhancement type channel mode offers controlled switching characteristics.
- Maximum gate-source voltage up to ±12 V for stable gate drive.
- Typical gate charge of 2.4 nC at Vgs enhances switching speed performance.
Product Description
onsemi NTR4501NT1G is a reliable N-Channel Power MOSFET designed for electronic applications requiring efficient switching and low on-resistance.
This device supports a maximum continuous drain current of 3.2 A and can withstand drain-source voltages up to 20 V, making it suitable for power management circuits, DC-DC converters, and switching regulators.
Housed in a space-saving SOT-23 surface-mount package, the MOSFET offers a maximum power dissipation of 1.25 W and operates reliably over a wide temperature range from -55°C to 150°C.
The enhancement channel mode and low typical gate charge of 2.4 nC enable fast switching speeds with minimal power loss. The maximum gate-source voltage rating of ±12 V ensures gate drive voltage flexibility without damaging the device.
Its compact size with dimensions of 2.9 mm length, 1.3 mm width, and 940 microns height makes it practical for use in dense circuit board layouts. Designed for surface-mount applications in compact SOT-23 package. Features low drain source resistance of 80 milliohms for efficient switching.
High power dissipation rating of 1.25 W supports robust operation. Wide operating temperature range from -55°C to 150°C ensures reliability in harsh environments. Enhancement type channel mode offers controlled switching characteristics.
Maximum gate-source voltage up to ±12 V for stable gate drive. Typical gate charge of 2.4 nC at Vgs enhances switching speed performance. Compact dimensions: length 2.9 mm, width 1.3 mm, height 940 microns. Commonly used in industrial, power management, automotive, and consumer electronic circuits requiring precise power switching and control.
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Frequently Asked Questions
The maximum continuous drain current of the NTR4501NT1G is 3.2 A.
This model can withstand a maximum drain-source voltage of 20 V.
The maximum power dissipation rating is 1.25 W, supporting robust operation.
The typical gate charge at Vgs is 2.4 nC, which enhances switching speed performance.
The dimensions of the SOT-23 package are 2.9 mm in length, 1.3 mm in width, and 940 microns in height.
It operates reliably over a wide temperature range from -55°C to 150°C.
This model uses an enhancement channel mode, providing controlled switching characteristics.
The maximum gate-source voltage is ±12 V, ensuring stable gate drive.
The maximum drain-source resistance is 80 milliohms, which contributes to efficient switching.
The NTR4501NT1G has a pin count of 3.
This model complies with the AEC-Q101 automotive standard.
It is commonly used in industrial, power management, automotive, and consumer electronic circuits requiring precise power switching and control.
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