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Infineon HEXFET N-Channel MOSFET, 79 A, 60 V Enhancement Mode, 3-Pin TO-220 IRF1018EPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 9.02mm |
| Length | 10.67mm |
| Model | IRF1018EPBF |
| Width | 4.83mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 79A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 8mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 110W |
| Typical Gate Charge Qg @ Vgs | 46nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.3V |
Key Features
- The device has a maximum continuous drain current of 79 amperes.
- It supports a maximum drain-source voltage of 60 volts, suitable for various power circuits.
- The MOSFET features a low on-resistance of 8 milliohms for minimal power loss.
- Designed with an enhancement channel mode and three pins for through-hole mounting.
- It offers a maximum power dissipation of 110 watts, enabling high-performance operation.
- The typical gate charge is 46 nanocoulombs at gate-source voltage, ensuring fast switching.
- The device can operate in temperatures ranging from -55°C to 175°C for reliable performance.
- The dimensions are compact with length 10.67 mm, width 4.83 mm, and height 9.02 mm.
Product Description
Infineon IRF1018EPBF is a robust HEXFET N-Channel MOSFET suited for demanding industrial and electronic applications requiring efficient power switching and motor control. Rated for a continuous drain current of 79 A and a drain-source voltage of 60 V, this device supports enhancement mode channel operation and is housed in a standard 3-pin TO-220 package designed for through-hole mounting.
With a low drain-source resistance of 8 mΩ and maximum power dissipation of 110 W, the MOSFET achieves high efficiency and thermal stability for power electronics. It features a typical gate charge of 46 nC at gate-source voltage and can withstand gate voltages from -20 V to +20 V, ensuring swift and reliable switching capabilities.
The device is engineered for operation across a wide temperature range from -55°C minimum to 175°C maximum, making it suitable for harsh environmental conditions. Its compact footprint with physical dimensions of 10.67 x 4.83 x 9.02 mm allows easy integration into various circuit boards and power modules.
This MOSFET is ideal for applications including motor control, AC-DC synchronous rectification, power conversion, and other electronic switching systems. Maximum continuous drain current is 79 A. Drain-source voltage rating is 60 V.
Low on-resistance of 8 milliohm minimizes power loss. Enhancement mode operation with TO-220 3-pin package. Capable of dissipating up to 110 W of power. Typical gate charge of 46 nC supports fast switching. Operational temperature range: -55°C to 175°C.
Compact dimensions of 10.67 mm length, 4.83 mm width, and 9.02 mm height. These features make the Infineon IRF1018EPBF MOSFET an essential component for advanced power electronics in industrial, laboratory, manufacturing, and commercial equipment.
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Frequently Asked Questions
The maximum continuous drain current for this model is 79 amperes.
It supports a maximum drain-source voltage of 60 volts.
The MOSFET features a low on-resistance of 8 milliohms, which helps minimize power loss.
It is housed in a TO-220 package type and designed for through-hole mounting.
This model can dissipate up to 110 watts of power.
The typical gate charge is 46 nanocoulombs at the gate-source voltage.
It can operate in temperatures ranging from -55°C to 175°C.
The dimensions are 10.67 mm in length, 4.83 mm in width, and 9.02 mm in height.
This model uses an N-channel enhancement mode.
The maximum gate-source voltage is rated from -20 V to +20 V.
It is suitable for applications including motor control, AC-DC synchronous rectification, and power conversion.
The country of origin for this model is India.
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