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Infineon IPT N-Channel MOSFET 800 V 400 A Low Rds(on) 1.2mΩ TO-263 Surface Mount IPT020N10N5ATMA1

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Infineon IPT N-Channel MOSFET 800 V 400 A Low Rds(on) 1.2mΩ TO-263 Surface Mount IPT020N10N5ATMA1

Name: Infineon IPT N-Channel MOSFET 800 V 400 A Low Rds(on) 1.2mΩ TO-263 Surface Mount IPT020N10N5ATMA1
Brand: Infineon
SKU: 406125
Price: 5.7 USD
Availability: InStock

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Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Model	IPT020N10N5ATMA1
Mount Type	Surface
Series	IPT
Maximum Operating Temperature	175°C
Package Type	TO-263
Minimum Operating Temperature	-55°C
Standards/Approvals	RoHS
Pin Count	8
Automotive Standard	AEC-Q101
Channel Type	N
Maximum Continuous Drain Current Id	400A
Maximum Drain Source Voltage Vds	800V
Maximum Drain Source Resistance Rds	1.2mΩ
Maximum Power Dissipation Pd	81W
Typical Gate Charge Qg @ Vgs	80nC
Maximum Gate Source Voltage Vgs	20V
Forward Voltage Vf	1V

Key Features

Features a low 1.2mΩ maximum drain-source resistance to reduce conduction losses.
Supports high power dissipation of up to 81 watts for sustained thermal performance.
Operates reliably in temperatures ranging from -55°C to 175°C for demanding environments.
Typical gate charge is 80nC at Vgs, allowing for rapid switching transitions.
Maximum gate-source voltage rating of 20 V provides flexibility in gate drive design.
Conforms to RoHS standards, confirming compliance with environmental regulations.
Qualified to the automotive AEC-Q101 standard ensuring robustness for vehicle applications.
Ideal for high-current switching in industrial power supplies and traction inverters.

Product Description

Infineon IPT020N10N5ATMA1 is a high-voltage N-Channel MOSFET designed for industrial-grade power switching applications that demand high efficiency and robustness. It features a maximum continuous drain current of 400 A and a maximum drain-source voltage rating of 800 V, enclosed in a rugged 8-pin TO-263 surface-mount package suitable for PCB assemblies.

The device's low on-resistance of 1.2 milliohms minimizes conduction losses, optimizing power efficiency in circuits. With a maximum power dissipation rating of 81 watts, this MOSFET can handle substantial thermal loads, supported further by its wide operational temperature range from -55°C up to 175°C, making it well-suited for harsh industrial and automotive environments.

This MOSFET exhibits a typical gate charge of 80nC at gate-source voltage (Vgs), ensuring rapid switching capability vital for high-frequency operations. Its gate-source voltage rating of 20 V allows flexibility for various gate drive designs.

The component complies with environmental norms as per RoHS certification and meets the stringent automotive qualification standard AEC-Q101, certifying its reliability and suitability for vehicle electronics.

Typical applications include use in traction inverters, high-voltage motor drives, industrial DC-DC power supplies, and energy storage systems requiring high current switching capability. Its surface-mount TO-263 package design facilitates straightforward placement and thermal management in complex PCB layouts.

Low Rds(on) of 1.2mΩ reduces power losses in switching applications. High 400A continuous drain current for heavy load demand. Wide operating temperature range supports diverse industrial environments. Robust automotive certification ensures device reliability in vehicles.

Compact surface-mount TO-263 package eases PCB integration and heat dissipation. RoHS compliant to fulfill environmental safety standards. Fast switching enabled by a typical gate charge of 80nC. High power dissipation capability of 81W under normal operating conditions.

Explore a wide range of Infineon semiconductor products and other power MOSFET components at EnvMart for advanced industrial, automotive, and power management applications.