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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IAUC60N04S6N044ATMA1 |
| Mount Type | Surface |
| Series | IAUC |
| Maximum Operating Temperature | 175°C |
| Package Type | SuperSO8 5 x 6 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 60A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 1.4mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.1V |
Infineon IAUC60N04S6N044ATMA1 is an N-Channel enhancement-mode MOSFET designed for high-current switching applications in automotive and industrial environments. Rated for a maximum continuous drain current of 60 A and a maximum drain-source voltage of 20 V, it provides robust performance in compact 8-pin SuperSO8 package (5 x 6 mm footprint) suitable for surface mounting.
This transistor operates reliably over a wide temperature range from -55°C to 175°C, accommodating harsh ambient and thermal conditions often found in automotive and industrial uses. It features a low drain-source on-resistance of 1.4 mΩ, minimizing conduction losses and improving overall system efficiency.
The MOSFET supports a maximum power dissipation of 81 W, enabling it to handle high loads and thermal stress during prolonged operation. Its typical gate charge of 80 nC facilitates efficient and predictable switching control, while the 20 V maximum gate-source voltage rating ensures wide drive margins for flexibility in circuit design.
Compliant with RoHS environmental standards, the MOSFET uses restricted substances that align with modern manufacturing regulations. Furthermore, it is qualified to the automotive AEC-Q101 standard, confirming its suitability for critical vehicle electronics applications including DC motor drivers, battery management, power distribution, and power conversion circuits.
Low on-resistance of 1.4 mΩ reduces conduction losses. High continuous drain current of 60 A supports heavy current loads. Maximum drain-source voltage of 20 V allows integration in low-voltage systems. Power dissipation rating of 81 W for sustained thermal management.
Gate charge of 80 nC provides predictable switching energy requirements. Wide operating temperature range of -55°C to 175°C suits harsh environments. Automotive-grade AEC-Q101 qualification ensures reliability in vehicle electronics.
Compact 8-pin SuperSO8 surface mount package facilitates PCB assembly.
This MOSFET is ideal for industrial, automotive, and power electronics applications requiring efficient switching and thermal reliability. Use cases include DC motor drivers, battery management systems, power distribution modules, and power conversion circuits in vehicles and industrial equipment.
Explore the complete Infineon range of MOSFETs on EnvMart for high-performance, reliable semiconductor components designed for modern electronic designs.
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