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Infineon IAUC N-Channel Enhancement MOSFET 60 A, 20 V, 81 W Power Dissipation, 8-Pin SuperSO8 IAUC60N04S6N044ATMA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Model IAUC60N04S6N044ATMA1
Mount Type Surface
Series IAUC
Maximum Operating Temperature 175°C
Package Type SuperSO8 5 x 6
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 8
Automotive Standard AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 60A
Maximum Drain Source Voltage Vds 20V
Maximum Drain Source Resistance Rds 1.4mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 81W
Typical Gate Charge Qg @ Vgs 80nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1.1V

Key Features

  • Low conduction losses ensured by 1.4 mΩ drain-source resistance.
  • High power dissipation capability of 81 W supports sustained thermal performance.
  • Wide operating temperature range from -55°C to 175°C.
  • Typical gate charge of 80 nC ensures predictable switching behavior.
  • Gate-source voltage rating of 20 V allows strong drive margins.
  • Compliant with RoHS standards for restricted substances.
  • Automotive grade with AEC-Q101 qualification suitable for vehicle electronics.
  • Surface mount device in a compact SuperSO8 5 x 6 package.

Product Description

Infineon IAUC60N04S6N044ATMA1 is an N-Channel enhancement-mode MOSFET designed for high-current switching applications in automotive and industrial environments. Rated for a maximum continuous drain current of 60 A and a maximum drain-source voltage of 20 V, it provides robust performance in compact 8-pin SuperSO8 package (5 x 6 mm footprint) suitable for surface mounting.

This transistor operates reliably over a wide temperature range from -55°C to 175°C, accommodating harsh ambient and thermal conditions often found in automotive and industrial uses. It features a low drain-source on-resistance of 1.4 mΩ, minimizing conduction losses and improving overall system efficiency.

The MOSFET supports a maximum power dissipation of 81 W, enabling it to handle high loads and thermal stress during prolonged operation. Its typical gate charge of 80 nC facilitates efficient and predictable switching control, while the 20 V maximum gate-source voltage rating ensures wide drive margins for flexibility in circuit design.

Compliant with RoHS environmental standards, the MOSFET uses restricted substances that align with modern manufacturing regulations. Furthermore, it is qualified to the automotive AEC-Q101 standard, confirming its suitability for critical vehicle electronics applications including DC motor drivers, battery management, power distribution, and power conversion circuits.

Low on-resistance of 1.4 mΩ reduces conduction losses. High continuous drain current of 60 A supports heavy current loads. Maximum drain-source voltage of 20 V allows integration in low-voltage systems. Power dissipation rating of 81 W for sustained thermal management.

Gate charge of 80 nC provides predictable switching energy requirements. Wide operating temperature range of -55°C to 175°C suits harsh environments. Automotive-grade AEC-Q101 qualification ensures reliability in vehicle electronics.

Compact 8-pin SuperSO8 surface mount package facilitates PCB assembly.

This MOSFET is ideal for industrial, automotive, and power electronics applications requiring efficient switching and thermal reliability. Use cases include DC motor drivers, battery management systems, power distribution modules, and power conversion circuits in vehicles and industrial equipment.

Explore the complete Infineon range of MOSFETs on EnvMart for high-performance, reliable semiconductor components designed for modern electronic designs.

Infineon IAUC N-Channel Enhancement MOSFET 60 A, 20 V, 81 W Power Dissipation, 8-Pin SuperSO8 IAUC60N04S6N044ATMA1
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Frequently Asked Questions

The maximum continuous drain current for this model is 60 A.

This MOSFET has a maximum drain-source voltage rating of 20 V.

It supports a maximum power dissipation of 81 W, enabling it to handle high loads effectively.

The typical gate charge for this MOSFET is 80 nC, which ensures predictable switching behavior.

This unit operates reliably over a wide temperature range from -55°C to 175°C.

It is packaged in a compact SuperSO8 5 x 6 mm surface mount package.

Yes, it is compliant with RoHS standards for restricted substances.

This MOSFET is qualified to the automotive AEC-Q101 standard, confirming its suitability for vehicle electronics.

The maximum drain-source on-resistance is 1.4 mΩ, which helps minimize conduction losses.

This model features an 8-pin configuration.

This MOSFET has an N-channel configuration, designed for enhancement mode operation.

It is suitable for applications including DC motor drivers, battery management systems, and power distribution modules in automotive and industrial environments.

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