Infineon P-Channel MOSFET 1.9 A 60 V Enhancement Mode 3-Pin SOT-223 ISP25DP06NMXTSA1

Infineon's ISP25DP06NMXTSA1 is a P-Channel MOSFET designed for efficient switching and amplification in electronic circuits. Featuring a surface-mount 3-pin SOT-223 package, this transistor supports a maximum continuous drain current of 1.9 A and a maximum drain-source voltage of 60 V. Its enhancement mode channel provides reliable operation with a very low on-resistance of 1.7 mΩ, ensuring minimal power losses.

This device demonstrates excellent thermal performance with a maximum power dissipation of 81 W and can operate across a broad temperature range from -55°C up to 175°C, making it ideal for automotive and industrial environments. The typical gate charge at a gate-source voltage of 80 nC allows for fast switching capabilities, while a maximum gate-source voltage rating of 20 V aids in robust control in circuit designs.

Fully compliant with RoHS directives and certified to the automotive standard AEC-Q101, this MOSFET is suitable for use in power management, voltage regulation, and load switching applications across multiple industries including automotive, industrial automation, and consumer electronics.

Type P channel MOSFET with a compact 3-pin SOT-223 surface mount package for space-saving PCB layouts. Low on-resistance (Rds) of 1.7 mΩ for optimized conduction efficiency. Maximum power dissipation of 81 W supports high-load conditions.

Wide operating temperature range of -55°C to 175°C for versatile application environments. RoHS compliant and AEC-Q101 qualified ensuring environmental and automotive reliability standards.

This product enhances design flexibility in electronics manufacturing and power electronics solutions. The package is compatible with automated surface mounting processes, aiding efficient mass production.

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