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Infineon ISP Type P-Channel MOSFET, 1.7 A Continuous Drain Current, 60 V Drain Source Voltage, Surface ISP75DP06LMXTSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | ISP75DP06LMXTSA1 |
| Mount Type | Surface |
| Series | ISP |
| Maximum Operating Temperature | 175°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 1.7A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 1.7mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.1V |
Key Features
- Supports a maximum continuous drain current of 1.7 A.
- Operates at a maximum drain source voltage of 60 V.
- Features a low maximum drain source resistance of 1.7 milliohms.
- Operating temperature range from -55°C to 175°C for durability.
- Typical gate charge of 80 nC at 20 V gate source voltage.
- Designed with enhancement mode for efficient switching.
- Complies with RoHS and automotive AEC-Q101 standards.
- Compact surface mount SOT-223 package with 3 pins.
Product Description
Infineon ISP75DP06LMXTSA1 is a P-Channel MOSFET designed for various electronic and power semiconductor applications where robust switching and reliability are essential. It delivers a maximum continuous drain current of 1.7 A and supports up to 60 V drain source voltage, making it suitable for compact power control and amplification tasks.
The device features a surface mount SOT-223 package with 3 pins, enabling easy integration into modern printed circuit boards using surface mount technology. Its low maximum drain source resistance of 1.7 milliohms minimizes power losses and heat generation during operation. The MOSFET operates reliably in extreme conditions, with a temperature range between -55°C and 175°C, supporting both industrial and automotive environments.
This enhancement mode MOSFET has a typical gate charge of 80 nC at 20 V gate source voltage, enabling efficient and fast switching performance. Compliance with RoHS regulations and the automotive AEC-Q101 standard ensures product quality and environmental safety. Its compact size and rugged design suit applications in power management, automotive electronics, industrial control, and consumer electronics requiring reliable switching components.
Maximum continuous drain current: 1.7 A for handling moderate power loads. Drain source voltage: 60 V supporting medium voltage applications. Low Rds(on) of 1.7 mΩ reduces energy losses. Wide operating temperature range from -55°C to 175°C for harsh environments.
Surface mount 3-pin SOT-223 package for modern electronics assembly. RoHS compliant and AEC-Q101 automotive certified for quality assurance. Enhancement mode transistor ideal for efficient switching. Typical gate charge: 80 nC for fast response in switching circuits.
This P-Channel MOSFET by Infineon is ideal for various industrial, automotive, manufacturing, and electronic equipment applications requiring efficient power switching and control. Browse EnvMart's full catalog of semiconductor components and MOSFETs for additional compatible products and solutions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 1.7 A, suitable for handling moderate power loads.
It supports a maximum drain source voltage of 60 V, making it suitable for medium voltage applications.
The typical gate charge for this device is 80 nC at a gate source voltage of 20 V, allowing for efficient switching performance.
This model comes in a surface mount SOT-223 package with 3 pins, designed for easy integration into printed circuit boards.
It operates reliably within a temperature range of -55°C to 175°C, making it suitable for harsh environments.
The maximum drain source resistance is 1.7 milliohms, which helps minimize power losses during operation.
This model complies with the automotive AEC-Q101 standard, ensuring its suitability for automotive applications.
Yes, it is RoHS compliant, ensuring it meets environmental safety standards.
The maximum power dissipation for this MOSFET is 81 W, allowing it to handle significant power levels safely.
The forward voltage for this model is 1.1 V, which is an important specification for its operation.
It operates in enhancement mode, which is designed for efficient switching applications.
This model is suitable for power management, automotive electronics, industrial control, and consumer electronics requiring reliable switching components.
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