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Infineon iPB N-Channel MOSFET 273 A 100 V N 3-Pin TO-263 IPB048N15N5LFATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IPB048N15N5LFATMA1 |
| Mount Type | Surface |
| Series | iPB |
| Maximum Operating Temperature | +150°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 273A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 1.7mΩ |
| Channel Mode | N |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Designed for high-current, high-voltage load switching applications.
- Low on-resistance Rds(on) of 1.7mΩ minimizes conduction losses.
- Supports power dissipation of up to 81 W for effective thermal management.
- Wide operating temperature range from -55°C to +150°C enhances reliability in harsh environments.
- Compatible with surface-mount TO-263 package for heat-managed printed circuit boards.
- Total gate charge of 80nC enables predictable switching energy control.
- Forward voltage of 1.2 V ensures efficient diode conduction performance.
- Suitable for power supplies, motor drives, server power distribution, telecom rectifiers, and industrial switching.
Product Description
Infineon IPB048N15N5LFATMA1 is an advanced iPB Series N-channel MOSFET designed for demanding power switching applications requiring high current handling and voltage tolerance. The device offers a continuous drain current of 273 amperes and withstands a maximum drain-source voltage of 100 volts, making it ideal for high-load systems.
Packaged in a TO-263 surface-mount format, this MOSFET provides excellent thermal management and is suitable for integration into heat-managed printed circuit boards. Its low drain-source resistance of 1.7 mΩ reduces conduction losses, thereby improving efficiency in power conversion and switching circuits.
The device operates reliably over a broad temperature range from -55°C to +150°C, ensuring stable performance under harsh environmental conditions. The typical gate charge of 80 nC allows for predictable switching behavior, catering to precise energy management in electronic controls.
With a forward diode voltage of 1.2 V, the MOSFET exhibits efficient intrinsic diode conduction characteristics. It supports a maximum power dissipation of 81 watts, accommodating robust power demands in industrial and commercial electronics.
This MOSFET is optimal for applications including high-current power supplies, motor drive stages requiring large currents, server power distribution systems, telecom rectifiers, inverters, and various industrial switching scenarios.
Designed for high-current, high-voltage power switching. Low on-resistance for efficient conduction and reduced power loss. Wide operating temperature range for robust industrial use. Surface-mount TO-263 package for effective heat dissipation.
Suitable for motor drives, server power, and telecom applications. RoHS compliant for environmentally responsible operations.
Infineon MOSFETs are renowned for durability and electrical performance. Explore the full range of power semiconductors at EnvMart to find components tailored to your industrial and commercial requirements.
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Frequently Asked Questions
The maximum continuous drain current for this model is 273 amperes.
It can withstand a maximum drain-source voltage of 100 volts.
The low on-resistance (Rds(on)) of this device is 1.7 mΩ, which minimizes conduction losses.
This MOSFET supports a maximum power dissipation of 81 watts, allowing for effective thermal management.
The typical gate charge is 80 nC, enabling predictable switching energy control.
It operates reliably over a wide temperature range from -55°C to +150°C.
This model is packaged in a TO-263 surface-mount format, suitable for heat-managed printed circuit boards.
It is suitable for high-current power supplies, motor drives, server power distribution, telecom rectifiers, and industrial switching.
The forward voltage of the intrinsic diode is 1.2 V, which ensures efficient conduction performance.
The maximum gate-source voltage (Vgs) is 20 volts.
Yes, this model is RoHS compliant, ensuring environmentally responsible operations.
This device has a pin count of 3.
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