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Infineon BSZ N-Channel MOSFET 212A 60V 0.7mΩ Rds(on) Surface Mount SuperSO8 8-Pin BSZ040N06LS5ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | BSZ040N06LS5ATMA1 |
| Mount Type | Surface |
| Series | BSZ |
| Maximum Operating Temperature | +150°C |
| Package Type | SuperSO8 5 x 6 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 212A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 0.7mΩ |
| Channel Mode | N |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- The device features a low on-resistance of 0.7 milliohm to reduce conduction losses.
- It supports a continuous drain current of 212A for heavy current applications.
- Maximum power dissipation of 81W ensures robust thermal handling.
- Typical gate charge of 80 nanocoulombs provides predictable switching behavior.
- Operates reliably across -55°C to +150°C ambient temperature range.
- Maximum gate-to-source voltage rated at 20V to avoid gate damage.
- Forward voltage drop is 1.2V, enhancing synchronous circuit efficiency.
- Compact 8-pin SuperSO8 surface-mount package (5 x 6 mm footprint).
Product Description
Infineon BSZ040N06LS5ATMA1 N-Channel MOSFET is a high-current transistor engineered for surface-mount power conversion and switching applications. It supports a continuous drain current of 212A and can withstand drain-source voltages up to 60V. Packaged in a compact 8-pin SuperSO8 form factor (5 x 6 mm footprint), it is optimized for designs requiring low conduction losses and robust thermal management.
This MOSFET features a very low on-resistance of 0.7 milliohm, effectively minimizing power losses during high current operation. It can dissipate up to 81 watts of power, enabling effective thermal performance in demanding duty cycles. The device exhibits a typical forward voltage of 1.2V and a typical gate charge of 80 nanocoulombs, which helps maintain efficient and predictable switching characteristics.
Designed for industrial, commercial, and automotive power electronics, the device operates reliably over a wide temperature range from -55°C to +150°C. The maximum gate-source voltage of 20 volts ensures device protection against electrical stress during switching transients. RoHS compliance certifies adherence to environmental directives.
This MOSFET is ideal for use in high-current power conversion modules, DC-DC synchronous buck converters, motor-drive stages requiring significant drain current, and server power distribution systems. Its surface-mount package enables easy integration on compact printed circuit boards.
The device features a low on-resistance of 0.7 milliohm to reduce conduction losses. Supports 212A continuous drain current for heavy current requirements. 81W maximum power dissipation for effective thermal stress management.
1.2V forward voltage to improve efficiency in synchronous circuits. Typical gate charge of 80nC ensures predictable switching behavior. Wide operating temperature range from -55°C to +150°C. Maximum gate-to-source voltage of 20V to prevent gate overstress.
Compliant with RoHS standards for environmental safety. Compact SuperSO8 package for surface-mount applications.
This product is recommended for industrial electronics manufacturing, power supply design, motor control systems, and server infrastructure power management. Browse the full range of MOSFETs and discrete semiconductors on EnvMart for reliable power solutions.
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Frequently Asked Questions
This model supports a maximum continuous drain current of 212A, making it suitable for heavy current applications.
The maximum drain-source voltage for this unit is 60V, allowing it to operate effectively in various power applications.
It features a low on-resistance of 0.7 milliohm, which helps reduce conduction losses during operation.
The device can dissipate a maximum power of 81W, ensuring robust thermal handling in demanding applications.
It has a typical gate charge of 80 nanocoulombs, which provides predictable switching behavior.
This model operates reliably across a wide temperature range from -55°C to +150°C.
It comes in a compact SuperSO8 package with dimensions of 5 x 6 mm, suitable for surface-mount applications.
The maximum gate-to-source voltage is rated at 20V, which helps prevent gate damage during operation.
It exhibits a typical forward voltage drop of 1.2V, enhancing efficiency in synchronous circuits.
Yes, it is RoHS compliant, adhering to environmental safety directives.
It is recommended for use in industrial electronics manufacturing, power supply design, motor control systems, and server infrastructure power management.
The SuperSO8 package of this model has 8 pins, facilitating easy integration into circuit designs.
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