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Infineon IPL N-Channel MOSFET, 9.4 A, 700 V, Surface Mount ThinPAK 5x6 Package 5-Pin IPLK70R2K0P7ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Length | 6.35mm |
| Model | IPLK70R2K0P7ATMA1 |
| Mount Type | Surface |
| Series | IPL |
| Maximum Operating Temperature | 150°C |
| Package Type | ThinPAK 5x6 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 5 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 9.4A |
| Maximum Drain Source Voltage Vds | 700V |
| Maximum Drain Source Resistance Rds | 1.2mΩ |
| Maximum Power Dissipation Pd | 25.5W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 3V |
| Forward Voltage Vf | 900mV |
Key Features
- The ThinPAK 5x6 package has a small footprint of 5x6 mm and a low profile height of 1 mm.
- Offers extremely low losses and excellent thermal behaviour to enhance power density.
- Includes an integrated ESD protection diode and low switching losses (Eoss).
- Fully qualified according to JEDEC standards for industrial applications.
- Designed for optimal performance in flyback topologies with a range of RDS(on) values.
- Delivers best-in-class quality, reliability, and low electromagnetic interference.
- Meets automotive standard AEC-Q101 for enhanced robustness.
Product Description
The Infineon IPLK70R2K0P7ATMA1 is a high-performance N-Channel MOSFET designed for power electronics requiring a maximum continuous drain current of 9.4 A and a drain-source voltage rating of 700 V. This device is housed in a compact ThinPAK 5x6 package with a footprint of 5x6 mm and a low profile height of 1 mm, making it ideal for applications demanding space-saving solutions.
Its design incorporates extremely low switching and conduction losses along with excellent thermal capabilities, which together improve overall power density and efficiency in various electronic systems. The integrated ESD protection diode further enhances device reliability in sensitive electronic environments.
Fully tested and qualified according to JEDEC standards for industrial use, the IPLK70R2K0P7ATMA1 suits a wide range of applications, including power supplies and motor control in industrial, automotive, and commercial sectors. Its wide temperature range from -55°C to 150°C allows operation in harsh industrial conditions.
This MOSFET is optimized for flyback topologies with a typical gate charge of 80 nC at Vgs and a low on-resistance of 1.2 mΩ, enabling efficient switching performance. Additional features include compliance with the RoHS directive and automotive standard AEC-Q101 certification, assuring quality and environmental compliance.
The ThinPAK 5x6 package has a small footprint of 5x6 mm and a low profile height of 1 mm. Offers extremely low losses and excellent thermal behaviour to enhance power density. Includes an integrated ESD protection diode and low switching losses (Eoss).
Fully qualified according to JEDEC standards for industrial applications. Designed for optimal performance in flyback topologies with a range of RDS(on) values. Delivers best-in-class quality, reliability, and low electromagnetic interference.
Meets automotive standard AEC-Q101 for enhanced robustness.
This Infineon MOSFET is suitable for industrial, automotive, electronic manufacturing, power supply, and HVAC systems. Discover more high-quality components and solutions in the MOSFET category at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for the Infineon IPLK70R2K0P7ATMA1 is 9.4 A.
This model has a drain-source voltage rating of 700 V.
The dimensions of the ThinPAK 5x6 package are 5 mm by 6 mm with a height of 1 mm.
The maximum power dissipation for the IPLK70R2K0P7ATMA1 is 25.5 W.
The typical gate charge at Vgs for this device is 80 nC.
The maximum gate-source voltage for this model is 3 V.
The operating temperature range for the IPLK70R2K0P7ATMA1 is from -55°C to 150°C.
This model meets the automotive standard AEC-Q101 for enhanced robustness.
The maximum drain-source resistance (Rds) is 1.2 mΩ.
Yes, it includes an integrated ESD protection diode to enhance reliability.
Yes, it is fully qualified according to JEDEC standards for industrial applications.
This MOSFET is suitable for power supplies, motor control, and HVAC systems in industrial and automotive sectors.
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