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Infineon IPL N-Channel MOSFET 4.5 A 800 V 5-Pin ThinPAK 5x6 IPLK80R900P7ATMA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Length 6.42mm
Model IPLK80R900P7ATMA1
Mount Type Surface
Series IPL
Maximum Operating Temperature 150°C
Package Type ThinPAK 5x6
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 5
Automotive Standard AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 4.5A
Maximum Drain Source Voltage Vds 800V
Maximum Drain Source Resistance Rds 1.2mΩ
Maximum Power Dissipation Pd 43W
Typical Gate Charge Qg @ Vgs 80nC
Maximum Gate Source Voltage Vgs 3V
Forward Voltage Vf 900mV

Key Features

  • The MOSFET offers up to 0.6% efficiency gain compared to predecessors.
  • It features a lower operating temperature by 2°C to 8°C in typical flyback circuits.
  • Offers best-in-class RDS(on) and reduced switching losses for higher power density designs.
  • Includes integrated Zener diode for ESD protection and has a low EMI design.
  • The compact ThinPAK 5x6 package has a 5x6 mm² footprint and 1 mm height.
  • Suitable for adapters, chargers, audio SMPS, AUX supplies, and industrial power applications.
  • Complies with RoHS and meets automotive AEC-Q101 standards.

Product Description

Infineon IPLK80R900P7ATMA1 is a N-Channel MOSFET designed specifically for high efficiency and compact power management in flyback converter applications. Rated at 4.5 A continuous drain current and 800 V maximum drain-source voltage, it is optimized for adapters, chargers, audio switch-mode power supplies, auxiliary power, and industrial power circuits. The device significantly improves efficiency by up to 0.6%, contributing to lower power dissipation and a reduction in MOSFET operating temperature by 2°C to 8°C compared to previous generation and competitor products.

The MOSFET integrates advanced technology for best-in-class figures of merit including low RDS(on), reduced gate charge (Qg), input capacitance (Ciss), and output capacitance (Coss). This results in lower switching losses and enables designs with higher power density. The device includes an integrated Zener diode for robust electrostatic discharge (ESD) protection and operates with minimal electromagnetic interference (EMI).

The ThinPAK 5x6 package measures only 5x6 mm² with a low profile of 1 mm height, providing compact integration in system designs with reduced board space requirements. This package's low parasitic inductance makes it a perfect fit for power-dense and compact applications requiring efficient thermal management.

Up to 0.6% efficiency improvement over previous products. Lower MOSFET temperature by 2°C to 8°C under flyback conditions. Best-in-class RDS(on) and gate charge for reduced switching losses. Integrated Zener diode ESD protection enhances device reliability.

ThinPAK 5x6 package with a 5x6 mm² footprint and 1 mm height. Designed for adapters, chargers, audio SMPS, AUX, and industrial power. RoHS compliant and AEC-Q101 automotive qualified.

This high-performance MOSFET suits demanding industrial, commercial, and automotive power electronics applications where efficiency and space savings are critical. Explore more MOSFET products and components on EnvMart for extensive power semiconductor solutions.

Infineon IPL N-Channel MOSFET 4.5 A 800 V 5-Pin ThinPAK 5x6 IPLK80R900P7ATMA1
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Frequently Asked Questions

The maximum continuous drain current for the Infineon IPLK80R900P7ATMA1 is 4.5 A.

It can handle a maximum drain-source voltage of 800 V.

The ThinPAK 5x6 package has a footprint of 5x6 mm² and a height of 1 mm.

The operating temperature range is from -55°C to 150°C.

The maximum drain-source resistance (RDS(on)) is 1.2 mΩ.

Yes, it includes an integrated Zener diode for electrostatic discharge (ESD) protection.

The maximum power dissipation for the Infineon IPLK80R900P7ATMA1 is 43 W.

The typical gate charge (Qg) at Vgs is 80 nC.

This model complies with the AEC-Q101 automotive standard.

It is suitable for adapters, chargers, audio switch-mode power supplies, auxiliary power, and industrial power applications.

The maximum gate-source voltage (Vgs) is 3 V.

The Infineon IPLK80R900P7ATMA1 complies with RoHS standards.

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