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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Length | 6.42mm |
| Model | IPLK80R900P7ATMA1 |
| Mount Type | Surface |
| Series | IPL |
| Maximum Operating Temperature | 150°C |
| Package Type | ThinPAK 5x6 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 5 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 4.5A |
| Maximum Drain Source Voltage Vds | 800V |
| Maximum Drain Source Resistance Rds | 1.2mΩ |
| Maximum Power Dissipation Pd | 43W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 3V |
| Forward Voltage Vf | 900mV |
Infineon IPLK80R900P7ATMA1 is a N-Channel MOSFET designed specifically for high efficiency and compact power management in flyback converter applications. Rated at 4.5 A continuous drain current and 800 V maximum drain-source voltage, it is optimized for adapters, chargers, audio switch-mode power supplies, auxiliary power, and industrial power circuits. The device significantly improves efficiency by up to 0.6%, contributing to lower power dissipation and a reduction in MOSFET operating temperature by 2°C to 8°C compared to previous generation and competitor products.
The MOSFET integrates advanced technology for best-in-class figures of merit including low RDS(on), reduced gate charge (Qg), input capacitance (Ciss), and output capacitance (Coss). This results in lower switching losses and enables designs with higher power density. The device includes an integrated Zener diode for robust electrostatic discharge (ESD) protection and operates with minimal electromagnetic interference (EMI).
The ThinPAK 5x6 package measures only 5x6 mm² with a low profile of 1 mm height, providing compact integration in system designs with reduced board space requirements. This package's low parasitic inductance makes it a perfect fit for power-dense and compact applications requiring efficient thermal management.
Up to 0.6% efficiency improvement over previous products. Lower MOSFET temperature by 2°C to 8°C under flyback conditions. Best-in-class RDS(on) and gate charge for reduced switching losses. Integrated Zener diode ESD protection enhances device reliability.
ThinPAK 5x6 package with a 5x6 mm² footprint and 1 mm height. Designed for adapters, chargers, audio SMPS, AUX, and industrial power. RoHS compliant and AEC-Q101 automotive qualified.
This high-performance MOSFET suits demanding industrial, commercial, and automotive power electronics applications where efficiency and space savings are critical. Explore more MOSFET products and components on EnvMart for extensive power semiconductor solutions.
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