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Infineon IPL N-Channel MOSFET, 29 A, 650 V Enhancement Mode, 5-Pin ThinPAK 8x8 IPL65R095CFD7AUMA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Length 8.1mm
Model IPL65R095CFD7AUMA1
Mount Type Surface
Series IPL
Maximum Operating Temperature 150°C
Package Type ThinPAK 8x8
Minimum Operating Temperature -40°C
Standards/Approvals RoHS
Pin Count 5
Automotive Standard AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 29A
Maximum Drain Source Voltage Vds 650V
Maximum Drain Source Resistance Rds 95mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 171W
Typical Gate Charge Qg @ Vgs 80nC
Maximum Gate Source Voltage Vgs 30V
Forward Voltage Vf 1V

Key Features

  • This MOSFET features enhancement mode channel operation for efficient switching performance.
  • It supports a maximum continuous drain current of 29 A for heavy-duty applications.
  • The device voltage rating is 650 V, suitable for high voltage industrial environments.
  • Constructed with ThinPAK 8x8 surface mount package and has 5 pins for compact integration.
  • Utilizes CoolMOS™ CFD7 technology providing high power density and improved efficiency.
  • Operates reliably in temperatures from -40°C up to 150°C.
  • Designed for industrial resonant topologies, including server, telecom, solar, and EV charging stations.
  • Improved turn-off behaviour and reduced switching losses increase system efficiency.

Product Description

Infineon IPL65R095CFD7AUMA1 is a high-performance N-Channel MOSFET designed for industrial applications demanding enhanced power efficiency and reliability. Operating with a maximum continuous drain current of 29 A and a drain-source voltage rating of 650 V, this MOSFET is ideal for resonant topologies found in server, telecommunications, solar energy systems, and electric vehicle charging stations.

Featuring the CoolMOS™ CFD7 super junction technology in a compact ThinPAK 8x8 surface mount package with 5 pins, it offers reduced gate charge, improved turn-off behaviour, and lower reverse recovery charge. These specifications lead to lower switching losses and higher power density, enabling improved full-load efficiency in switch mode power supplies (SMPS).

This MOSFET operates reliably across a wide temperature range from -40°C to 150°C, with a maximum power dissipation rating of 171 W and a maximum gate-source voltage of 30 V. The device also features a maximum drain-source resistance of 95 milliohms and a forward voltage drop of approximately 1 V. Its robust design complies with the automotive standard AEC-Q101 and RoHS, ensuring suitability for automotive and industrial markets.

Applications include industrial power conversion, renewable energy inverters, EV charging infrastructure, telecom power supplies, and other demanding environments requiring efficient and reliable semiconductor components.

This MOSFET features enhancement mode channel operation for efficient switching performance. Supports a maximum continuous drain current of 29 A for heavy-duty applications. Voltage rating of 650 V suitable for high voltage industrial environments.

Utilizes CoolMOS™ CFD7 technology for superior power density and efficiency. Operates effectively in wide temperature ranges between -40°C and 150°C. Compact ThinPAK 8x8 surface mount package with 5 pin configuration. Meets automotive and environmental standards including AEC-Q101 and RoHS compliance.

Ideal for industrial switching power supplies, solar inverters, server power systems, and EV chargers. Explore more high-quality semiconductor components in the Electronics & Electricals category at EnvMart to upgrade your industrial, manufacturing, and renewable energy projects.

Infineon IPL N-Channel MOSFET, 29 A, 650 V Enhancement Mode, 5-Pin ThinPAK 8x8 IPL65R095CFD7AUMA1
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Frequently Asked Questions

The maximum continuous drain current for this model is 29 A, making it suitable for heavy-duty applications.

This MOSFET has a drain-source voltage rating of 650 V, which is suitable for high voltage industrial environments.

It comes in a ThinPAK 8x8 surface mount package with a 5-pin configuration for compact integration.

This model operates reliably in temperatures ranging from -40°C to 150°C.

It utilizes CoolMOS™ CFD7 technology, which provides high power density and improved efficiency.

The maximum power dissipation rating is 171 W, allowing for effective thermal management in applications.

The maximum gate-source voltage for this MOSFET is 30 V.

This device complies with the automotive standard AEC-Q101, ensuring its suitability for automotive applications.

The forward voltage drop is approximately 1 V, which is relevant for efficiency in switching applications.

The maximum drain-source resistance is 95 milliohms, contributing to its efficiency in power applications.

It is designed for industrial applications such as power conversion, renewable energy inverters, and electric vehicle charging stations.

The length of this model is 8.1 mm, which is important for fitting into various circuit designs.

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