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STMicroelectronics N-Channel Power MOSFET 55 A, 650 V, Enhancement Mode, 3-Pin TO-220 STP80N240K6
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 4.6mm |
| Length | 28.9mm |
| Model | STP80N240K6 |
| Width | 10.4mm |
| Mount Type | Through Hole |
| Series | STP |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | UL |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 55A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 45mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 140W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.5V |
Key Features
- Maximum continuous drain current of 55 amperes ensures high current capacity.
- 650 volts maximum drain source voltage for high voltage applications.
- TO-220 package with 3 pins enables reliable through-hole mounting.
- Low maximum drain-source resistance of 45 milliohms reduces conduction losses.
- Designed with ultra-low gate charge for high switching efficiency.
- Maximum power dissipation of 140 watts supports demanding power applications.
- Operates between -55°C and 150°C enabling broad temperature range use.
- Compliance with automotive standard AEC-Q101 ensures reliability.
Product Description
STMicroelectronics presents the STP80N240K6, a high voltage N-channel Power MOSFET engineered using advanced MDmesh K6 technology for superior efficiency and power density. This enhancement mode device supports a maximum drain current of 55 A and a drain-source voltage rating of 650 V, making it ideal for demanding power switching applications.
The device is housed in a 3-pin TO-220 package configured for through-hole mounting, offering compact size with dimensions of 28.9 mm length, 10.4 mm width, and 4.6 mm height. Its low maximum drain-source resistance of 45 mΩ helps minimize conduction loss, while the typical gate charge of 80 nC enhances switching performance.
Designed to operate over a wide temperature range from -55°C up to 150°C, it complies with automotive-grade AEC-Q101 standards, demonstrating reliability and robustness in harsh conditions. The maximum power dissipation of 140 W supports applications such as flyback converters, LED lighting, power adapters, and chargers that demand efficient power management.
This MOSFET is 100% avalanche tested and includes zener protection, providing enhanced protection against unexpected voltage spikes. With a maximum gate-source voltage of 30 V and a typical forward voltage of 1.5 V, it is well suited for industrial, automotive, and consumer electronics uses.
Its superior figure of merit (FOM) and world-class RDS(on) times area ensure best-in-class performance for power density, helping reduce bill of material (BOM) costs and board size in compact designs.
Maximum continuous drain current: 55 A. Drain-source voltage rating: 650 V. Package: TO-220, through-hole mount. Maximum drain-source resistance: 45 mΩ. Typical gate charge: 80 nC at Vgs. Maximum power dissipation: 140 W.
Temperature range: -55°C to 150°C. Compliance: AEC-Q101 automotive standard. Forward voltage typical: 1.5 V. Pin count: 3. Dimensions: 28.9 mm x 10.4 mm x 4.6 mm (LxWxH). Ideal for industrial power electronics, automotive circuits, laboratory power supplies, and consumer devices requiring efficient high-voltage switching.
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Frequently Asked Questions
The maximum continuous drain current for this model is 55 A.
This MOSFET has a maximum drain-source voltage rating of 650 V.
It is housed in a TO-220 package, which is designed for through-hole mounting.
The maximum power dissipation is 140 W, suitable for demanding power applications.
The typical gate charge at Vgs is 80 nC, enhancing its switching performance.
The dimensions of this model are 28.9 mm in length, 10.4 mm in width, and 4.6 mm in height.
It operates within a temperature range of -55°C to 150°C.
The maximum gate-source voltage for this MOSFET is 30 V.
It complies with the automotive standard AEC-Q101, ensuring reliability in automotive applications.
The maximum drain-source resistance is 45 mΩ, which helps reduce conduction losses.
This model is suitable for applications such as flyback converters, LED lighting, power adapters, and chargers.
The typical forward voltage for this device is 1.5 V.
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