STMicroelectronics N-Channel MOSFET 60 A, 1.2 kV Enhancement 3-Pin Hip-247 SCTW60N120G2

STMicroelectronics SCTW60N120G2 is a silicon carbide N-Channel power MOSFET designed using advanced 2nd generation SiC MOSFET technology. It supports continuous drain currents up to 60 A and withstands drain-source voltages of 1.2 kV, making it suitable for demanding industrial and power electronics applications.

The device features an enhancement channel mode with an extremely low Rds(on) of 73 mΩ, ensuring high efficiency and reduced power loss. It is housed in a 3-pin Hip-247 through-hole package, measuring 34.8 mm in length, 15.6 mm in width, and 5 mm in height, suitable for robust and reliable mounting.

This MOSFET maintains performance across a wide temperature range, from -55°C minimum operating temperature up to a maximum junction temperature of 200°C. The typical gate charge is 94 nC at the gate-source voltage with a maximum gate voltage rating of ±18 V. Forward voltage is rated at 3 V with a power dissipation capacity of 389 W.

The device incorporates a very fast and robust intrinsic body diode and exhibits switching losses nearly independent of junction temperature, beneficial for efficient power switching tasks. It complies with the automotive AEC-Q101 standard and is UL approved, ensuring reliability for automotive and industrial use cases.

Common applications include switching mode power supplies, DC-DC converters, and industrial motor control systems where high voltage and current performance are required. This power MOSFET features enhancement channel mode with a low on-resistance of 73 mΩ.

It comes in a 3-pin Hip-247 package suitable for through-hole mounting. Designed for high power dissipation up to 389 W and operating temperatures reach 200°C. Maximum gate-source voltage is 18 V with a typical gate charge of 94 nC at Vgs.

The device includes a very fast, robust intrinsic body diode. Explore more Power MOSFETs and semiconductor solutions at EnvMart for your electronics and industrial applications.