Infineon CoolMOS N-Channel MOSFET, 22 A, 700 V, 3-Pin TO-247 IPW65R110CFD7XKSA1

Infineon IPW65R110CFD7XKSA1 is a CoolMOS super junction N-Channel MOSFET designed to deliver high efficiency and reliability in demanding power electronics applications. This device supports a continuous drain current of 22 A and can withstand drain-source voltages up to 700 V, making it highly suitable for industrial and commercial uses.

The MOSFET's 3-pin TO-247 package facilitates easy through-hole mounting and integration into various circuits requiring robust power management solutions. With a maximum power dissipation rating of 127 W, it offers a strong thermal performance supported by its operating temperature range from -55°C to 150°C.

Featuring excellent hard-commutation ruggedness and integrated fast body diode, it ensures safety margins for designs with increased bus voltage. The low drain-source resistance of 110 milliohms contributes to enhanced efficiency by minimizing conduction losses.

This MOSFET is often deployed in sophisticated industrial SMPS applications, including servers, telecommunications, solar power systems, and electric vehicle charging stations, where it significantly improves efficiency at light and full loads.

The typical gate charge of 53 nC and a forward voltage of 1 V facilitate optimized switching performance, while the maximum gate-source voltage of ±20 V protects the gate from electrical stress.

This MOSFET features CoolMOS technology for enhanced efficiency in high power applications. It supports a maximum power dissipation of 127 W suitable for industrial use. The device operates reliably from -55°C up to 150°C providing stability over a wide temperature range.

Designed for through-hole mounting, it includes a forward voltage of 1 V and a typical gate charge of 53 nC. The low maximum drain-source resistance of 110 mΩ reduces conduction losses for improved performance. It comes with a maximum gate-source voltage rating of 20 V to protect the gate circuitry.

Compact dimensions include a height of 21.1 mm, length of 16.13 mm, and width of 5.21 mm. Ideal for applications in server, telecom, solar, and electric vehicle charging infrastructure.

This MOSFET is a cost-competitive solution delivering outstanding power density and efficiency improvements over competing devices. Its rugged design and thermal stability make it reliable for use in industrial, manufacturing, and energy sectors where energy efficiency and performance are critical.

Explore more Infineon MOSFETs and related discrete semiconductor components in the EnvMart catalog to find the ideal device for your power electronics projects.