Infineon IPD Type P-Channel MOSFET, 22 A, 100 V Enhancement, 3-Pin TO-252 Package IPD11DP10NMATMA1

Infineon IPD11DP10NMATMA1 is a high-performance P-Channel MOSFET designed for power management, battery management, load switching, and reverse polarity protection applications in industrial automation and electronic circuits. Featuring a 3-pin TO-252 surface mount package, this device integrates low on-resistance and fast switching capabilities to optimize efficiency in medium to low power applications.

The MOSFET supports a maximum continuous drain current of 22 A and a maximum drain-source voltage of 100 V, making it suitable for diverse electronic loads. Its enhancement mode channel ensures minimal conduction losses, while the device endurance is enhanced by a maximum power dissipation of 125 W and a wide operating temperature range from -55°C to 175°C.

Infineon's OptiMOS™ technology in this component reduces design complexity and allows easy interfacing with microcontrollers. The typical gate charge of -59 nC enables rapid switching, crucial for applications where switching speed impacts system performance. Maximum gate-source voltage rating of 20 V ensures device robustness under control signal variations.

Physical dimensions of the device are 6.73 mm in length, 6.22 mm in width, and 2.41 mm in height. The TO-252 package type facilitates surface mounting on printed circuit boards, suitable for automated assembly in industrial and commercial electronics manufacturing.

This P-Channel MOSFET finds applications in battery management systems, industrial automation control circuits, and other electronic devices requiring efficient and compact power switching components. It offers an effective solution to reduce complexity while providing reliable operation in harsh industrial environments.

Maximum continuous drain current of 22 amperes for high load handling. Drain to source voltage rating of 100 volts suitable for medium voltage circuits. Enhancement mode channel with low on-resistance of 111 milliohms enhances efficiency.

Compact TO-252 surface mount package with 3 pins for PCB assembly. Maximum power dissipation of 125 watts supports robust performance. Wide operating temperature range from -55°C to 175°C ensures reliability. Typical gate charge of -59 nanocoulombs facilitates fast switching.

Maximum gate to source voltage of 20 volts protects gate oxide integrity. Compact physical dimensions support PCB space savings. Explore additional semiconductor components and power management devices at EnvMart for comprehensive industrial and electronic solutions.

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