Infineon ISC N-Channel MOSFET 192 A Maximum Continuous Drain Current 100 V Drain Source Voltage 8-Pin TDSON ISC027N10NM6ATMA1

Infineon ISC027N10NM6ATMA1 is an N-Channel MOSFET optimized for high-current power conversion and motor-drive environments. Designed with a robust 100 V drain-source voltage and capable of continuous drain current up to 192 A, this MOSFET provides efficient switching and low conduction losses with a 2.24 mΩ on-resistance.

The device supports a maximum power dissipation of 245 W, allowing it to handle sustained power demands in demanding applications. Its typical gate charge of 91 nC ensures an effective balance between switching speed and gate drive requirements, while a maximum gate-source voltage of 20 V provides wide gate drive headroom.

Operating temperature ranges from −55 °C to 175 °C, enabling use in harsh thermal conditions. The forward voltage during conduction is typically 1 V, suitable for efficient power management. It comes in an 8-pin TDSON surface-mount package, making it ideal for compact PCB designs.

Applications include high-current DC-DC converters, motor drives, battery management systems, and traction inverter stages. The rugged thermal and electrical characteristics suit industrial electronics, automotive electronics, renewable energy systems, and power management topology requiring robust performance.

The device supports 192 A maximum continuous drain current. 100 V maximum drain-source voltage enables high-voltage operation. Low conduction losses with 2.24 mΩ on-resistance. Handles up to 245 W power dissipation. Balanced gate drive with 91 nC typical gate charge.

Wide gate-source voltage rating of 20 V. Forward voltage of 1 V during conduction. Wide operating temperature from −55 °C to 175 °C. Compact 8-pin TDSON surface mount package. Dimensions: Length 6.1 mm, Width 1.1 mm, Height 5.1 mm.

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