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Infineon ISC N-Channel MOSFET 75 A 100 V 8-Pin TDSON Surface Mount ISC080N10NM6ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 5.35mm |
| Length | 6.1mm |
| Model | ISC080N10NM6ATMA1 |
| Width | 1.2mm |
| Mount Type | Surface |
| Series | ISC |
| Maximum Operating Temperature | 175°C |
| Package Type | TDSON |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 75A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 8.05mΩ |
| Maximum Power Dissipation Pd | 100W |
| Typical Gate Charge Qg @ Vgs | 24nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Key Features
- Supports continuous drain current of 75 amps for high-load applications.
- 100 V maximum drain-source voltage ensures voltage headroom in power stages.
- 8-Pin TDSON package designed for surface mount PCB assembly.
- Maximum power dissipation of 100 watts enables strong thermal performance under load.
- Low on-resistance of 8.05 milliohms reduces conduction power losses.
- Operates over a wide temperature range from -55°C to 175°C for harsh environments.
- Typical gate charge of 24 nanocoulombs facilitates predictable switching behavior.
- Maximum gate-source voltage rating of 20 V protects the gate electrode.
Product Description
Infineon ISC080N10NM6ATMA1 is a high-current N-channel MOSFET designed for efficient power switching in compact surface-mount applications. This transistor supports a maximum continuous drain current of 75 A and a maximum drain-source voltage of 100 V, making it suitable for demanding power electronic circuits that require robust voltage and current handling.
The MOSFET features a low on-resistance of 8.05 milliohms, which minimizes conduction losses and enhances overall system efficiency. With a typical gate charge of 24 nanocoulombs, it offers predictable switching characteristics essential for high-performance power stages.
Its 8-pin TDSON package is optimized for surface-mount assembly, offering a compact footprint with dimensions of 6.1 mm in length, 1.2 mm in width, and 5.35 mm in height. The package supports a maximum power dissipation of 100 W, enabling sustained thermal performance under continuous operation.
The device operates reliably over a wide temperature range from -55°C to 175°C, allowing use in thermally demanding industrial, automotive, and power management environments. Maximum gate-source voltage rating of 20 V provides a safety margin for gate drive circuits.
Typical applications for this MOSFET include DC-DC converter output stages, high-current synchronous rectification, motor-drive half-bridge circuits, power distribution switches, and switch-mode power supply stages. Its robust electrical and thermal specifications make it a versatile component for industrial, automotive, and electronic power conversion applications.
Supports continuous drain current of 75 amps for high-load applications. 100 V maximum drain-source voltage ensures voltage headroom in power stages. 8-Pin TDSON package designed for surface mount PCB assembly. Maximum power dissipation of 100 watts enables strong thermal performance under load.
Low on-resistance of 8.05 milliohms reduces conduction power losses. Operates over a wide temperature range from -55°C to 175°C for harsh environments. Typical gate charge of 24 nanocoulombs facilitates predictable switching behavior.
Maximum gate-source voltage rating of 20 V protects the gate electrode. Compact package dimensions of 6.1 mm length, 1.2 mm width, and 5.35 mm height optimize layout. Forward voltage drop of 1 volt ensures efficient conduction during operation.
Explore the Electronics & Electricals category on EnvMart to find additional Infineon semiconductor components and advanced MOSFET solutions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 75 A, making it suitable for high-load applications.
It has a maximum drain-source voltage rating of 100 V, ensuring adequate voltage headroom in power stages.
The TDSON package dimensions are 6.1 mm in length, 1.2 mm in width, and 5.35 mm in height.
The on-resistance is 8.05 milliohms, which helps to minimize conduction power losses.
The typical gate charge is 24 nanocoulombs, facilitating predictable switching behavior.
This unit supports a maximum power dissipation of 100 watts, enabling strong thermal performance under load.
It operates over a wide temperature range from -55°C to 175°C, suitable for harsh environments.
The maximum gate-source voltage rating is 20 V, providing protection for the gate electrode.
Typical applications include DC-DC converter output stages, high-current synchronous rectification, and motor-drive half-bridge circuits.
This model features an 8-pin configuration, optimized for surface mount assembly.
The forward voltage drop is 1 volt, ensuring efficient conduction during operation.
It features an N-channel design, which is commonly used for efficient power switching applications.
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