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Infineon IPD Type P-Channel MOSFET, 13.7 A, 100 V Enhancement Mode, 3-Pin TO-252 Package IPD19DP10NMATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 2.41mm |
| Length | 6.73mm |
| Model | IPD19DP10NMATMA1 |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | IPD |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 13.7A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 186mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 83W |
| Typical Gate Charge Qg @ Vgs | -36nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | -1.2V |
Key Features
- The device operates in enhancement mode with a typical maximum power dissipation of 83 watts.
- Designed for surface mount with 3 pins, suitable for battery management and load switch applications.
- Has a maximum drain-source resistance of 186 milliohms ensuring efficiency at low loads.
- Features wide operating temperature range from -55°C to 175°C for industrial reliability.
- Supports a maximum gate-source voltage of 20 V, with fast switching and avalanche ruggedness.
- Compact size with dimensions approximately 6.73mm length, 6.22mm width, and 2.41mm height.
- Non-automotive standard device ideal for industrial automation and reverse polarity protection.
Product Description
Infineon IPD19DP10NMATMA1 is a P-Channel Enhancement Mode MOSFET in a TO-252 surface-mount package designed for demanding electronic and power management applications. This device supports a continuous drain current of 13.7 amperes and a maximum drain-source voltage of 100 volts, making it suitable for battery management, load switching, and reverse polarity protection.
The MOSFET features a low on-resistance of 186 milliohms which improves efficiency, especially at low load conditions. It operates across a wide temperature range from -55°C to 175°C, offering robust performance in industrial environments. The maximum power dissipation is 83 watts, supporting moderate to high power applications.
This component has a typical gate charge of 36 nanocoulombs and supports gate-source voltages up to 20 volts. Its compact 3-pin TO-252 package offers easy integration on printed circuit boards for surface mounting and is compatible with microcontroller interfaces for efficient switching.
Ideal for industrial automation and embedded systems, the Infineon IPD19DP10NMATMA1 provides low design complexity and fast switching speed, ensuring reliable operation in battery management systems and automated electronic devices. While it is not certified to automotive standards, it remains a preferred choice for commercial and industrial applications requiring durable MOSFETs with low gate charge and robust avalanche capability.
The device operates in enhancement mode with a typical maximum power dissipation of 83 watts. Designed for surface mount with 3 pins, suitable for battery management and load switch applications. Has a maximum drain-source resistance of 186 milliohms ensuring efficiency at low loads.
Features wide operating temperature range from -55°C to 175°C for industrial reliability. Supports a maximum gate-source voltage of 20 V, with fast switching and avalanche ruggedness. Compact size with dimensions approximately 6.73mm length, 6.22mm width, and 2.41mm height.
Non-automotive standard device ideal for industrial automation and reverse polarity protection. Explore more components in the MOSFET category at EnvMart to find suitable solutions for your electronic design and industrial automation needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 13.7 amperes.
This MOSFET has a maximum drain-source voltage rating of 100 volts.
The maximum drain-source resistance is 186 milliohms, which enhances efficiency at low loads.
The typical maximum power dissipation for this MOSFET is 83 watts.
It supports a maximum gate-source voltage of 20 volts.
The dimensions of the TO-252 package are approximately 6.73mm in length, 6.22mm in width, and 2.41mm in height.
This MOSFET operates over a wide temperature range from -55°C to 175°C.
It is suitable for battery management, load switching, and reverse polarity protection applications.
This model features a 3-pin configuration for surface mounting.
The typical gate charge is 36 nanocoulombs.
This MOSFET is not certified for automotive standards, making it ideal for industrial applications instead.
It features a P-Channel enhancement mode.
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