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Infineon N-Channel MOSFET, 350 A Continuous Drain Current, 100 V Drain Source Voltage, 1.5 mΩ IAUS300N10S5N015TATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IAUS300N10S5N015TATMA1 |
| Mount Type | Surface |
| Series | IAUS300N10S5N015T |
| Maximum Operating Temperature | +175°C |
| Package Type | HDSOP |
| Minimum Operating Temperature | -55°C |
| Pin Count | 16 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 350A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 1.5mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 375W |
| Forward Voltage Vf | 1.3V |
Key Features
- Supports heavy current loads with a maximum drain current of 350 A.
- High drain-source voltage rating of 100 V enables high-voltage switching applications.
- Low on-resistance of 1.5 mΩ reduces conduction losses effectively.
- Power dissipation capacity up to 375 W allows sustained thermal loading.
- Wide operating temperature range from -55 °C to +175 °C supports extreme environments.
- ±20 V gate tolerance protects against transient overstress for reliable operation.
- Surface-mount 16-pin HDSOP package supports compact circuit assemblies.
- Meets automotive standard AEC-Q101 for vehicle electronics use.
Product Description
Infineon IAUS300N10S5N015TATMA1 is a high-current N-Channel MOSFET designed for demanding automotive and power applications. It features a 100 V drain-source voltage rating and supports a continuous drain current of 350 A. The device operates in enhancement mode and is housed in a 16-pin surface-mount HDSOP package, ideal for compact circuit board assemblies.
This MOSFET offers a low maximum drain-source resistance of 1.5 mΩ, which minimizes conduction losses and enhances efficiency. It dissipates up to 375 W of power, enabling it to handle significant thermal loads during sustained operation.
It operates reliably within a wide temperature range from -55 °C to +175 °C, making it suitable for extreme automotive environments. The ±20 V gate tolerance provides robust protection against transient voltage spikes that could damage the gate oxide.
The intrinsic diode has a forward voltage of 1.3 V, which reduces conduction losses during reverse current conditions. This device complies with the automotive standard AEC-Q101, ensuring it meets rigorous quality and reliability criteria for vehicle electronics.
Applications include automotive traction inverter stages, high-current motor control modules, battery management systems, power distribution circuits, DC-DC converters in vehicles, and electric powertrain auxiliary circuits. PCB layout requires thermal copper pours and multiple vias for heat dissipation due to the high power capability.
Supports heavy current loads with a maximum continuous drain current of 350 A. High voltage switching with 100 V maximum drain-source voltage. Low on-resistance of 1.5 mΩ to improve conduction efficiency. Power dissipation rating of 375 W for sustained thermal performance.
Wide ambient temperature range from -55 °C to +175 °C. ±20 V gate tolerance for protection against transient events. 16-pin surface-mount HDSOP package for compact design. Conforms to automotive AEC-Q101 standard. Intrinsic diode with 1.3 V forward voltage.
Ideal for automotive traction inverters and motor control. Explore further products in the MOSFET category at EnvMart for automotive and industrial electronics needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 350 A.
It has a maximum drain-source voltage rating of 100 V.
The on-resistance is low at 1.5 mΩ, which helps reduce conduction losses.
This MOSFET can dissipate up to 375 W of power, allowing for sustained thermal performance.
It operates within a wide temperature range from -55 °C to +175 °C.
It is housed in a 16-pin surface-mount HDSOP package, suitable for compact circuit assemblies.
This device complies with the automotive standard AEC-Q101, ensuring it meets quality and reliability criteria for vehicle electronics.
It has a gate tolerance of ±20 V, providing protection against transient voltage spikes.
The intrinsic diode has a forward voltage of 1.3 V, which helps reduce conduction losses during reverse current conditions.
This model is suitable for applications such as automotive traction inverters, high-current motor control modules, and battery management systems.
The channel mode for this device is enhancement mode.
The country of origin for this MOSFET is India.
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