Infineon 800V CoolMOS P7 N-Channel MOSFET, 2.5 A, 800 V Enhancement Mode, 3-Pin TO-252 IPD80R2K4P7ATMA1

Infineon IPD80R2K4P7ATMA1 is a high-performance 800V CoolMOS P7 N-Channel MOSFET featuring a maximum continuous drain current of 2.5 A and a maximum drain-source voltage of 800 V in enhancement mode. It is housed in a 3-pin TO-252 surface mount package ensuring reliable, compact installation and efficient thermal performance.

This MOSFET is optimized primarily for fly back applications including adapters, chargers, LED drivers, audio switch mode power supplies (SMPS), AUX power supplies, and industrial power systems. Its design provides up to 0.6% efficiency gains and reduces MOSFET temperature by 2°C to 8°C compared to older models and competitors, enabling superior power density and switching performance.

Features such as a maximum drain-source resistance (Rds) of 2.4 Ω and a typical gate charge (Qg) of 7.5 nC contribute to lower switching losses and enhanced power efficiency. The device supports an operating temperature range from -55°C to 150°C, making it robust for diverse environments. Integrated Zener diode offers Electrostatic Discharge (ESD) protection up to Class 2 (HBM) standard, ensuring device reliability.

Maximum continuous drain current: 2.5 A. Maximum drain-source voltage: 800 V. Enhancement mode channel operation. 3-pin TO-252 package with surface mount technology. Maximum power dissipation: 22 W. Operating temperature range: -55°C to 150°C.

Typical gate charge: 7.5 nC. Integrated Zener diode ESD protection (Class 2 HBM). No automotive standard compliance.

This MOSFET is well suited for industrial manufacturing, power management, consumer electronics, and HVAC applications that demand efficient power switching, durability, and thermal management. It provides designers with a mature, reliable solution for high-voltage MOSFET requirements.

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