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STMicroelectronics N-Channel Power MOSFET 36 A, 600 V, Enhancement Mode, 8-Pin TO-LL STP50N60DM6
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 4.4mm |
| Length | 28.9mm |
| Model | STP50N60DM6 |
| Width | 10mm |
| Mount Type | Through Hole |
| Series | STP50N60DM6 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-LL |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 36A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 80mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 250W |
| Typical Gate Charge Qg @ Vgs | 55nC |
| Maximum Gate Source Voltage Vgs | 25V |
| Forward Voltage Vf | 1.6V |
Key Features
- High-voltage N-channel power MOSFET designed for high-efficiency bridge topologies.
- Low gate charge of 55 nC for enhanced switching performance.
- Maximum power dissipation of 250 W supports demanding applications.
- Fast recovery body diode with low recovery charge and time.
- Extremely high dv/dt ruggedness and Zener protection for reliability.
- Peak operating temperature up to 150°C, with a minimum operating temperature of -55°C.
- Package features 8 pins in a TO-LL through-hole configuration.
- Low on-resistance of 80 mΩ for efficient power management.
Product Description
STMicroelectronics STP50N60DM6 is a high-voltage, N-channel enhancement mode power MOSFET featuring a maximum continuous drain current of 36 A and a maximum drain-source voltage of 600 V. It comes in an 8-Pin TO-LL package designed for through-hole mounting, making it suitable for a wide range of industrial and electronic power applications.
This device is part of the MDmesh DM6 series, which combines advanced low recovery charge technology and improved RDS(on) performance for efficient switching behavior, ideal for high-efficiency bridge topologies and zero-voltage switching (ZVS) phase-shift converters. It is 100% avalanche tested to ensure ruggedness and reliability under demanding operating conditions.
The STP50N60DM6 features a typical gate charge of 55 nC at Vgs, along with a maximum gate-to-source voltage of 25 V. Its low on-resistance of 80 milliohms reduces power losses and enhances overall system efficiency. The fast recovery body diode with low charge and short recovery time allows for minimal switching losses.
Its broad operating temperature range from -55°C to 150°C enables performance stability in harsh industrial environments. The 8-pin through-hole TO-LL package with dimensions of approximately 28.9 mm length, 10 mm width, and 4.4 mm height facilitates straightforward integration into PCBs.
High voltage N-channel MOSFET optimized for industrial power electronics. Suitable for applications including power suppliers, inverters, switch-mode power supplies, and motor drives. Fast recovery diode for efficient switching and reduced electromagnetic interference.
Rugged and avalanche tested for reliable long-term operation.
This power MOSFET meets the needs of electronics engineers seeking robust components for industrial, manufacturing, and commercial power control circuits. Explore more in the Electronics & Electricals category at EnvMart for complementary semiconductor and discrete components.
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Frequently Asked Questions
The maximum continuous drain current for the STP50N60DM6 is 36 A.
It can handle a maximum drain-source voltage of 600 V.
The typical gate charge at Vgs is 55 nC.
The on-resistance of this model is 80 mΩ.
The TO-LL package has dimensions of approximately 28.9 mm in length, 10 mm in width, and 4.4 mm in height.
The operating temperature range is from -55°C to 150°C.
This MOSFET uses a through-hole mounting type.
The maximum power dissipation for this model is 250 W.
The maximum gate-to-source voltage is 25 V.
It is suitable for applications including power supplies, inverters, switch-mode power supplies, and motor drives.
This device is part of the MDmesh DM6 series.
This model features an N-channel type.
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