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onsemi PNP Transistor TO-92, 800 mA, 60 V, 625 mW Power Dissipation, 3-Pin PN2907ATF

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 20.95mm
Length 5.2mm
Model PN2907ATF
Width 4.19mm
Mount Type Through Hole
Series PN2907A
Maximum Operating Temperature 150°C
Package Type TO-92
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo -60V
Minimum DC Current Gain hFE 75
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -5V
Maximum Collector Base Voltage VCBO -60V
Maximum Power Dissipation Pd 625mW
Maximum DC Collector Current Idc -800mA
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz

Key Features

  • This transistor supports a maximum power dissipation of 625 mW.
  • It features a 3-pin Through Hole mount TO-92 package with single transistor configuration.
  • Maximum collector-emitter voltage and collector-base voltage are both rated at -60 V.
  • The device has a minimum DC current gain (hFE) of 75 and a maximum transition frequency of 100 MHz.
  • The transistor operates over a temperature range from -55°C to 150°C, suitable for various industrial applications.
  • Designed for switching and amplification in electronic circuits.
  • Compact TO-92 package with dimensions 20.95mm height, 5.2mm length, 4.19mm width.

Product Description

onsemi PN2907ATF is a small-signal PNP bipolar junction transistor housed in a TO-92 Through Hole package, designed for electronic component applications requiring reliable switching and amplification. The transistor supports a maximum DC collector current of 800 mA and a collector-emitter voltage of 60 V, making it suitable for low to medium power applications.

The device features a maximum power dissipation of 625 mW, ensuring efficient heat management under typical operating conditions. With a minimum DC current gain (hFE) of 75 and a maximum transition frequency of 100 MHz, the transistor meets performance requirements for fast switching circuits.

This PNP transistor operates reliably within a temperature range of -55°C to 150°C, suitable for use in automotive, industrial, and general electronics environments. The package's Through Hole mount type with 3 pins facilitates easy integration with PCB designs.

The compact physical size of 20.95 mm height, 5.2 mm length, and 4.19 mm width ensures adaptability in space-constrained circuits. Its robust construction provides stable electrical characteristics without requiring special approvals or automotive standards.

This transistor supports a maximum power dissipation of 625 mW. It features a 3-pin Through Hole mount TO-92 package with single transistor configuration. Maximum collector-emitter voltage and collector-base voltage are both rated at -60 V.

The device has a minimum DC current gain (hFE) of 75 and a maximum transition frequency of 100 MHz. The transistor operates over a temperature range from -55°C to 150°C, suitable for various industrial applications. Designed for switching and amplification in electronic circuits.

Compact TO-92 package with dimensions 20.95mm height, 5.2mm length, 4.19mm width.

This transistor is widely used in industrial, automotive, and laboratory electronic circuit designs that require dependable small-signal switching components. It is ideal for general signal amplification, switching loads, or driving low power devices.

Explore additional onsemi transistors and semiconductor components on EnvMart to find compatible parts and complementary devices for your applications.

Explore more products in our Bipolar Transistors category.

onsemi PNP Transistor TO-92, 800 mA, 60 V, 625 mW Power Dissipation, 3-Pin PN2907ATF
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Frequently Asked Questions

The PN2907ATF transistor supports a maximum power dissipation of 625 mW.

This model has a maximum collector-emitter voltage rating of -60 V.

The dimensions of the TO-92 package are 20.95 mm in height, 5.2 mm in length, and 4.19 mm in width.

The minimum DC current gain (hFE) of this transistor is 75.

The maximum transition frequency for the PN2907ATF is 100 MHz.

This transistor operates reliably within a temperature range of -55°C to 150°C.

It features a Through Hole mount type with 3 pins, facilitating easy integration with PCB designs.

The maximum DC collector current for the PN2907ATF is -800 mA.

This transistor is suitable for low to medium power applications, including switching and amplification in electronic circuits.

The maximum emitter-base voltage (VEBO) for the PN2907ATF is -5 V.

The transistor polarity of this model is PNP.

The PN2907ATF is manufactured in India.

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