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STMicroelectronics N-Channel Power MOSFET 12 A, 500 V, Enhancement Mode, 3-Pin TO-263 STP12NM50
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 4.37mm |
| Length | 10.4mm |
| Model | STP12NM50 |
| Width | 9.35mm |
| Mount Type | Surface |
| Series | STP12NM50 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 12A |
| Maximum Drain Source Voltage Vds | 500V |
| Maximum Drain Source Resistance Rds | 350mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 160W |
| Typical Gate Charge Qg @ Vgs | 28nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.5V |
Key Features
- Features an Enhancement mode channel for robust switching performance.
- Packaged in a compact 3-Pin TO-263 surface-mount package for easy PCB integration.
- Offers low on-resistance of 350 milliohms to reduce conduction losses.
- Maximum power dissipation up to 160 W enabling high power handling capability.
- Wide operating temperature range from -65°C to 150°C for versatile usage.
- Typical gate charge of 28 nC at Vgs of 10 V for efficient drive requirements.
- Supports maximum gate-source voltage of ±30 V for reliability under varying conditions.
- Forward voltage of 1.5 V ensures good conduction characteristics.
Product Description
STMicroelectronics STP12NM50 is a high-performance N-Channel Power MOSFET built with MDmesh technology that combines multiple drain process with PowerMESH horizontal layout. This device delivers outstanding low on-resistance and high avalanche energy capability, making it suitable for demanding switching applications.
Housed in a 3-pin TO-263 surface mount package, the MOSFET supports a maximum continuous drain current of 12 A and a drain-source voltage rating of 500 V. The enhancement mode channel ensures reliable and efficient switching performance with a low gate charge of 28 nC, minimizing drive losses.
Operating over a temperature range of -65°C to 150°C, the STP12NM50 is robust for industrial environments. Its maximum power dissipation is rated at 160 W, allowing it to handle high power levels effectively without excessive heating.
The device has an on-resistance of 350 milliohms, reducing conduction losses, and supports a maximum gate-source voltage of ±30 V, ensuring resilience to voltage spikes. The forward voltage drop is 1.5 V, providing efficient conduction in power circuits.
This MOSFET is well-suited for use in switch mode power supplies, motor control, and general power switching applications in industrial, automotive, and commercial electronic equipment.
Package dimensions include a length of 10.4 mm, width of 9.35 mm, and height of 4.37 mm, facilitating compact and efficient PCB layouts. Enhancement mode N-Channel MOSFET with 12 A drain current. 500 V maximum drain-source voltage rating.
Low Rds(on) of 350 mΩ for high efficiency. Maximum power dissipation of 160 W. Wide operating temperature range (-65°C to 150°C). Low gate charge for reduced switching losses. Robust construction with avalanche and dv/dt capability.
Compact 3-pin TO-263 package suitable for surface mount. Explore more STMicroelectronics discrete semiconductor devices and enhance your power electronics projects with reliable, high-quality MOSFETs available at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 12 A.
It has a maximum drain-source voltage rating of 500 V.
The on-resistance is 350 milliohms, which helps reduce conduction losses.
The typical gate charge at Vgs of 10 V is 28 nC.
The maximum power dissipation is rated at 160 W, allowing for high power handling capability.
It operates over a temperature range from -65°C to 150°C.
This unit is packaged in a compact 3-pin TO-263 surface mount package.
The maximum gate-source voltage supported is ±30 V.
The forward voltage drop is 1.5 V, ensuring good conduction characteristics.
The package dimensions are 10.4 mm in length, 9.35 mm in width, and 4.37 mm in height.
It is suitable for switch mode power supplies, motor control, and general power switching applications in industrial, automotive, and commercial electronic equipment.
This model uses an enhancement mode N-channel for reliable switching performance.
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