Infineon IPD600N25N3GATMA1 N-Channel MOSFET 25 A 250 V Enhancement Mode 5-Pin TO-252 Surface Mount IPD600N25N3GATMA1

Infineon IPD600N25N3GATMA1 is a high-voltage N-channel MOSFET designed for efficient power switching and conversion in compact surface-mounted applications. This transistor supports a maximum continuous drain current of 25 A and a drain-source voltage of 250 V, making it suitable for a variety of industrial and electronic power control tasks.

The device features a TO-252 surface-mount package with 5 pins, facilitating easy integration into printed circuit boards with limited space. Its low on-resistance of 60 milliohms significantly reduces conduction losses, enhancing overall energy efficiency.

This MOSFET has a typical gate charge of 22 nanocoulombs, enabling effective switching performance without excessive gate driving effort. It is capable of dissipating up to 136 watts of power, supporting high-power applications such as DC-DC converters, motor-drive inverter switches, switch-mode power supplies, battery management, power distribution systems, and high-voltage relay or solenoid drivers.

Infineon's design allows operation in harsh thermal environments, ranging from -55 °C to 175 °C, ensuring reliability in both cold-start and high-temperature conditions. The maximum gate-source voltage rating of 20 volts must be respected to avoid gate overstress, requiring proper gate drive design. The forward voltage drop of 0.9 V helps minimize conduction losses associated with the MOSFET's internal diode.

The compact dimensions (6.73 mm length, 7.47 mm width, 2.41 mm height) and surface mount configuration provide ease of assembly and space savings on PCBs. Infineon’s IPD600N25N3GATMA1 is an ideal component for industrial electronics, automotive power management, renewable energy systems, and advanced power conversion modules.

High-voltage N-channel MOSFET with 250 V drain-source rating. 25 A continuous drain current supports robust load requirements. Low on-state resistance enhances power efficiency. Compact 5-pin TO-252 package for surface mount applications.

Wide temperature range operates from -55 °C to 175 °C. Maximum power dissipation of 136 W for demanding applications. Typical gate charge of 22 nC facilitates efficient switching. Forward voltage minimizes conduction losses to 0.9 V.

Explore more high-quality power semiconductors and MOSFET components from Infineon in EnvMart's Electronics & Electricals category.