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Infineon N-Channel MOSFET 35 A, 100 V, Enhancement Mode, 5-Pin TO-252 Package IPD25CN10NGATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 2.41mm |
| Length | 6.73mm |
| Model | IPD25CN10NGATMA1 |
| Width | 7.47mm |
| Mount Type | Surface |
| Series | IPD25CN10N G |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 5 |
| ANSI/ESD S20.20 | 2014 |
| BS EN 61340-5-1 | 2007 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 35A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 26mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 71W |
| Typical Gate Charge Qg @ Vgs | 23nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Key Features
- The enhancement mode channel provides stable N-channel operation for efficient switching.
- Featuring a low maximum drain-source resistance of 26mΩ to minimize conduction losses.
- Equipped with a 5-pin TO-252 surface mount package for compact and reliable installation.
- Supports a maximum power dissipation of 71 W ensuring robust thermal management.
- Operational temperature range from -55°C to 175°C accommodates demanding industrial environments.
- Maximum gate-source voltage rating of 20 V ensures gate protection and reliability.
- Typical gate charge of 23 nC supports high switching speeds with low losses.
- Compact dimensions of 6.73 mm length, 7.47 mm width, and 2.41 mm height optimize board space.
Product Description
Infineon IPD25CN10NGATMA1 is a surface mount N-channel MOSFET intended for precision power electronics applications. It supports a maximum continuous drain current of 35 A and a drain-source voltage of 100 V, making it suitable for high-current switching devices.
This MOSFET features an enhancement mode channel and low on-resistance of 26 mΩ at a gate-source voltage of 10 V, minimizing conduction losses and improving overall system efficiency. The 5-pin TO-252 package promotes compact design and surface mounting capability.
The device has a typical gate charge of 23 nC, enabling fast switching speeds critical for applications like isolated DC-DC converters in telecom systems, motor control in 48 V to 80 V automotive and power tool applications, synchronous rectification, and Class D audio amplifiers.
Its robust operations cover a wide temperature range from -55°C up to 175°C, suitable for harsh industrial environments. Additionally, it has a maximum power dissipation capability of 71 W, allowing it to handle high power loads reliably.
The IPD25CN10NGATMA1’s compact size (6.73 mm × 7.47 mm × 2.41 mm) ensures minimal board space consumption while maintaining excellent electrical performance. Its gate-source voltage maximum rating of 20 V ensures durability and protection during switching operations.
Key features include:. Low Rds(on) for reduced switching losses. High power density with halogen-free packaging. Optimized for Class D audio amplifiers, telecom isolated converters, automotive motor controls, and synchronous rectification.
Environmentally friendly design with long operational life. This MOSFET is ideal for industrial, automotive, laboratory, and power management applications demanding efficient and reliable high-current switching solutions.
Explore additional Infineon semiconductor products and related MOSFET devices at EnvMart for comprehensive electronics components selection.
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Frequently Asked Questions
The maximum continuous drain current for this model is 35 A.
It has a maximum drain-source voltage rating of 100 V.
The maximum drain-source resistance (Rds(on)) is 26 mΩ at a gate-source voltage of 10 V.
The typical gate charge is 23 nC, which supports high switching speeds.
The operational temperature range is from -55°C to 175°C.
It is housed in a 5-pin TO-252 surface mount package.
The maximum power dissipation capability is 71 W.
The dimensions of this model are 6.73 mm in length, 7.47 mm in width, and 2.41 mm in height.
The maximum gate-source voltage rating is 20 V.
This model is suitable for applications such as isolated DC-DC converters, motor control, synchronous rectification, and Class D audio amplifiers.
It complies with ANSI/ESD S20.20:2014 and BS EN 61340-5-1:2007 standards.
The channel type is N-channel, utilizing enhancement mode for operation.
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