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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.1mm |
| Length | 5.35mm |
| Model | BSC097N06NSATMA1 |
| Width | 6.1mm |
| Mount Type | Surface |
| Series | OptiMOS |
| Maximum Operating Temperature | 150°C |
| Package Type | TDSON |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 46A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 14.6mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 36W |
| Typical Gate Charge Qg @ Vgs | 12nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
Infineon BSC097N06NSATMA1 is an OptiMOS series N-Channel MOSFET designed for use in power and electronic assemblies requiring efficient conduction and fast switching. It is rated for a maximum continuous drain current of 46 amperes at a drain-source voltage of 60 volts, making it suitable for high-current low-voltage applications such as synchronous buck regulators, motor driver half-bridge circuits, and DC-DC converters in server power supplies.
This MOSFET comes in a compact 8-pin TDSON package optimized for surface-mount assembly, supporting dense PCB layouts and automated manufacturing. The enhancement-mode channel type allows precise gate control and low on-resistance of 14.6 milliohms, reducing conduction losses and improving efficiency.
The device can dissipate up to 36 watts of power and operates effectively over a wide temperature range, from -55°C to 150°C, suitable for industrial and elevated temperature environments. The typical gate charge is 12 nanocoulombs, which enables swift gate switching transitions, while the gate-source voltage tolerance of ±20 volts provides flexibility in drive voltage selection.
Physical dimensions of 5.35mm length, 6.1mm width, and 1.1mm height support compact designs without compromising performance. It is ideal for use in battery management, power distribution, and high-current point-of-load switching applications.
Supports 46A continuous drain current for high load capability. Maximum 60V drain-source voltage for robust low-voltage switching. Low Rds(on) of 14.6mΩ minimizes power loss and heat generation. 8-pin TDSON package for efficient surface mounting.
Wide operating temperature range from -55°C to +150°C. Typical gate charge of 12nC ensures fast switching. Gate-source voltage tolerance of -20V to +20V enables versatile drive methods.
This Infineon MOSFET is widely used in industrial, automotive electronics, server power supply modules, and other electronic power management applications. It is supplied as new and originates from India by default unless otherwise stated.
Explore more high-performance semiconductor components within the MOSFET category at EnvMart.
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