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Infineon OptiMOS N-Channel MOSFET, 46 A Continuous Drain Current, 60 V Drain Source Voltage, Enhancement BSC097N06NSATMA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 1.1mm
Length 5.35mm
Model BSC097N06NSATMA1
Width 6.1mm
Mount Type Surface
Series OptiMOS
Maximum Operating Temperature 150°C
Package Type TDSON
Minimum Operating Temperature -55°C
Pin Count 8
Channel Type N
Maximum Continuous Drain Current Id 46A
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 14.6mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 36W
Typical Gate Charge Qg @ Vgs 12nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.2V

Key Features

  • Supports continuous drain current of 46 amperes.
  • Maximum drain to source voltage rating is 60 volts.
  • Utilizes enhancement mode channel type for efficient switching.
  • Packaged in an 8-pin TDSON surface-mount format.
  • Has low drain-to-source resistance of 14.6 milliohms to minimize conduction losses.
  • Maximum power dissipation rated at 36 watts for sustained thermal performance.
  • Operates reliably between -55°C and 150°C ambient temperatures.
  • Typical gate charge of 12 nanocoulombs for fast switching response.

Product Description

Infineon BSC097N06NSATMA1 is an OptiMOS series N-Channel MOSFET designed for use in power and electronic assemblies requiring efficient conduction and fast switching. It is rated for a maximum continuous drain current of 46 amperes at a drain-source voltage of 60 volts, making it suitable for high-current low-voltage applications such as synchronous buck regulators, motor driver half-bridge circuits, and DC-DC converters in server power supplies.

This MOSFET comes in a compact 8-pin TDSON package optimized for surface-mount assembly, supporting dense PCB layouts and automated manufacturing. The enhancement-mode channel type allows precise gate control and low on-resistance of 14.6 milliohms, reducing conduction losses and improving efficiency.

The device can dissipate up to 36 watts of power and operates effectively over a wide temperature range, from -55°C to 150°C, suitable for industrial and elevated temperature environments. The typical gate charge is 12 nanocoulombs, which enables swift gate switching transitions, while the gate-source voltage tolerance of ±20 volts provides flexibility in drive voltage selection.

Physical dimensions of 5.35mm length, 6.1mm width, and 1.1mm height support compact designs without compromising performance. It is ideal for use in battery management, power distribution, and high-current point-of-load switching applications.

Supports 46A continuous drain current for high load capability. Maximum 60V drain-source voltage for robust low-voltage switching. Low Rds(on) of 14.6mΩ minimizes power loss and heat generation. 8-pin TDSON package for efficient surface mounting.

Wide operating temperature range from -55°C to +150°C. Typical gate charge of 12nC ensures fast switching. Gate-source voltage tolerance of -20V to +20V enables versatile drive methods.

This Infineon MOSFET is widely used in industrial, automotive electronics, server power supply modules, and other electronic power management applications. It is supplied as new and originates from India by default unless otherwise stated.

Explore more high-performance semiconductor components within the MOSFET category at EnvMart.

Infineon OptiMOS N-Channel MOSFET, 46 A Continuous Drain Current, 60 V Drain Source Voltage, Enhancement BSC097N06NSATMA1
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Frequently Asked Questions

The maximum continuous drain current for this model is 46 amperes.

It has a maximum drain-source voltage rating of 60 volts.

The typical gate charge is 12 nanocoulombs, enabling fast switching response.

This MOSFET is packaged in an 8-pin TDSON surface-mount format.

The dimensions are 1.1 mm in height, 5.35 mm in length, and 6.1 mm in width.

The maximum power dissipation for this unit is rated at 36 watts.

It operates reliably between -55°C and 150°C ambient temperatures.

The low drain-to-source resistance is 14.6 milliohms, which minimizes conduction losses.

It is suitable for high-current low-voltage applications such as synchronous buck regulators and motor driver half-bridge circuits.

The gate-source voltage tolerance is ±20 volts, providing flexibility in drive voltage selection.

This model utilizes an enhancement mode channel type for efficient switching.

This MOSFET originates from India.

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