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Infineon Isolated OptiMOS 2 Type P, Type N-Channel MOSFET 1.5 A 20 V Enhancement 6-Pin TSOP BSL215CH6327XTSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1mm |
| Length | 2.9mm |
| Model | BSL215CH6327XTSA1 |
| Width | 1.6mm |
| Mount Type | Surface |
| Series | OptiMOS |
| Maximum Operating Temperature | 150°C |
| Package Type | TSOP |
| Minimum Operating Temperature | -55°C |
| Pin Count | 6 |
| Number of Elements per Chip | 2 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P, Type N |
| Maximum Continuous Drain Current Id | 1.5A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 280mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 500mW |
| Typical Gate Charge Qg @ Vgs | 3nC |
| Maximum Gate Source Voltage Vgs | -12, +12V |
| Forward Voltage Vf | 0.8V |
| Transistor Configuration | Isolated |
Key Features
- Features isolated transistor configuration with two elements per chip for complementary switching.
- Supports maximum continuous drain current up to 1.5 A and drain-source voltage of 20 V.
- Equipped with low gate charge of 3 nC for enhanced switching speed and performance.
- Has a maximum drain-source resistance of 280 milliohm to minimize conduction losses.
- Compact TSOP 6-pin surface mount package reducing PCB footprint.
- Operates reliably between -55 °C and 150 °C for automotive and industrial environments.
- Power dissipation is rated at 500 mW to handle thermal loads efficiently.
- Meets automotive standard AEC-Q101 for elevated stress tolerance.
Product Description
Infineon BSL215CH6327XTSA1 Isolated OptiMOS 2 MOSFET product is designed for automotive and industrial electronics requiring reliable and efficient switching performance.
This device features a unique isolated transistor configuration combining Type P and Type N channel elements on a single chip. This architecture supports flexible and complementary circuit designs, especially useful in compact and demanding automotive electronic modules.
The component features a maximum continuous drain current of 1.5 A and is rated for a drain-source voltage of 20 V, making it suitable for low-voltage systems and control circuits.
Boasting a low typical gate charge of 3 nC, the device achieves enhanced switching speeds while its maximum drain-source resistance of 280 milliohm helps reduce conduction losses and improve efficiency.
Packaged in a small 6-pin TSOP format, the MOSFET is ideal for surface mounting on printed circuit boards where space optimization is critical. The package dimensions measure approximately 2.9 mm in length, 1.6 mm in width, and 1 mm in height.
Operating temperature range from -55 °C to 150 °C ensures reliable performance across cold starts to high-temperature environments such as vehicle underbonnets. It is qualified to the stringent automotive AEC-Q101 standard, assuring durability under elevated stress conditions.
Other technical limits include a maximum gate-source voltage of ±12 V and a diode forward voltage drop of 0.8 V, important for protection and conduction considerations.
Applications for this MOSFET include automotive signal switching and control, battery management systems, power distribution modules, compact DC-DC converters, voltage regulator circuits, load switching in infotainment subsystems, and embedded motor control driver stages.
Features isolated transistor configuration for complementary P- and N-channel operation. Compact 6-pin TSOP surface mount package supports space-saving PCB layouts. Low gate charge enables fast switching and reduced power loss.
Rated for automotive operating temperature range and AEC-Q101 compliance. Reliable performance for automotive, industrial, and power management applications. Explore more semiconductor and MOSFET solutions from Infineon at EnvMart for your electronic component needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 1.5 A.
It can handle a maximum drain-source voltage of 20 V.
The typical gate charge is 3 nC, which contributes to enhanced switching speed.
The package dimensions are approximately 2.9 mm in length, 1.6 mm in width, and 1 mm in height.
It operates reliably between -55 °C and 150 °C.
This model meets the automotive standard AEC-Q101, ensuring durability under elevated stress conditions.
The maximum power dissipation rating for this unit is 500 mW.
This chip contains two elements, allowing for complementary switching.
The maximum drain-source resistance is 280 milliohm, which helps minimize conduction losses.
The diode forward voltage drop is 0.8 V.
It features an isolated transistor configuration combining Type P and Type N channel elements.
This model is designed for surface mounting on printed circuit boards.
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