Infineon HEXFET N-Channel MOSFET 120 A 75 V Enhancement Mode 3-Pin TO-220 IRFB3307ZPBF

Infineon IRFB3307ZPBF is a HEXFET N-Channel Enhancement Mode MOSFET designed for power electronics applications requiring high current and moderate voltage operation. It supports a continuous drain current of 120 A and a maximum drain-source voltage of 75 V, making it suitable for motor control, DC-DC converters, synchronous rectifiers, and other industrial power switching uses.

This device uses Infineon’s HEXFET technology to offer low switching losses and efficient thermal management. The MOSFET is housed in a robust TO-220 through-hole package with 3 pins, which facilitates reliable mounting and heat dissipation in various electronic assemblies.

The IRFB3307ZPBF features a low on-resistance of 6 mΩ to reduce conduction losses and improve overall system efficiency. It can dissipate up to 230 watts of power, operating safely across a broad temperature range from -55°C to 175°C, supporting demanding industrial environments.

The device’s typical gate charge of 79 nC at a gate-source voltage of 10 V enables high-speed switching characteristics essential for efficient power management. The maximum gate-source voltage rating of ±20 V ensures protection against voltage spikes, enhancing reliability.

Physical dimensions are compact with 10.66 mm length, 9.02 mm height, and 4.82 mm width, offering space-saving benefits in circuit design. This MOSFET is ideal for applications such as motor controls, AC-DC synchronous rectifiers, power inverters, and industrial power supplies.

Features a maximum continuous drain current of 120 amperes for high power handling. Supports a drain-source voltage rating of 75 volts, ensuring suitability for medium voltage applications. Incorporates enhancement channel mode operation for efficient switching.

Provides low drain-source resistance of 6 milliohms for reduced power losses. Maximum power dissipation capability of 230 watts for thermal reliability. Wide operational temperature range from -55°C to 175°C. Typical gate charge of 79 nanocoulombs facilitates fast switching.

Maximum gate-source voltage rated at ±20 volts to protect gate insulation. Compact TO-220 package with 3 pins for secure mounting and heat management.

Infineon's MOSFETs are widely trusted in electronic power management for delivering high efficiency, robustness, and reliability in demanding commercial, industrial, and automotive applications.

Discover more Infineon products and similar MOSFET options through EnvMart's comprehensive electronics component catalog for your industrial design needs.