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Infineon CoolMOS CE N-Channel MOSFET, 5.7 A Maximum Continuous Drain Current, 800 V Drain Source Voltage IPD80R1K0CEATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 2.41mm |
| Length | 6.73mm |
| Model | IPD80R1K0CEATMA1 |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | CoolMOS CE |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 5.7A |
| Maximum Drain Source Voltage Vds | 800V |
| Maximum Drain Source Resistance Rds | 950mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 83W |
| Typical Gate Charge Qg @ Vgs | 31nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1V |
Key Features
- Features Advanced CoolMOS CE technology ensuring high efficiency and low on-state resistance.
- Supports a maximum power dissipation of 83 W for robust thermal performance.
- Compact TO-252 package suitable for surface mounting applications.
- Operates efficiently over a temperature range from -55°C to 150°C.
- Has a maximum drain source resistance of 950 mΩ ensuring low conduction losses.
- Typical gate charge is 31 nC promoting high-frequency switching efficiency.
- Gate source voltage withstands from -30 V to +30 V enhancing stability.
- Ideal for LED lighting, automotive power distribution, and high-voltage industrial applications.
Product Description
Infineon IPD80R1K0CEATMA1 is a CoolMOS CE series N-Channel MOSFET designed for power management and high-voltage applications. It features a maximum continuous drain current of 5.7 A and a maximum drain source voltage of 800 V, making it suitable for demanding electronic and industrial environments. The device is housed in a compact 3-pin TO-252 surface mount package with dimensions approximately 6.73 mm in length, 6.22 mm in width, and 2.41 mm in height.
This MOSFET provides increased power density which enables compact system design and reduces cooling requirements, leading to cost savings and improved system efficiency. With a maximum power dissipation of 83 W, it operates effectively in harsh environments with operating temperatures ranging from -55°C to 150°C.
The typical gate charge of 31 nC and maximum gate source voltage rating of -30 V to +30 V makes this MOSFET especially well suited to high-frequency switching applications, reducing energy losses and improving reliability. Its low maximum drain source resistance (Rds(on)) of 950 mΩ ensures lower conduction losses during operation.
Commonly used in LED lighting retrofit solutions, automotive power distribution systems, and industrial high-voltage circuits, this device supports applications requiring high efficiency and thermal stability. The Infineon CoolMOS CE technology incorporated ensures reliability with a stable dv/dt rating under rapid voltage changes.
Advanced CoolMOS CE technology enhances efficiency and reliability. High power dissipation capability allows for robust thermal performance. Low gate charge supports efficient high-frequency switching. Wide operating temperature range for versatile application environments.
RoHS compliant for environmentally sound usage. Compact TO-252 package for easy surface mounting integration. Suitable for power management, LED lighting, automotive, and industrial applications.
This Infineon CoolMOS CE MOSFET is an optimal choice for electronics manufacturers seeking efficient power solutions with reliable performance in both commercial and industrial sectors. Explore more MOSFETs and semiconductor devices at EnvMart for your design and manufacturing needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 5.7 A.
It has a maximum drain source voltage rating of 800 V.
The typical gate charge is 31 nC, which supports high-frequency switching efficiency.
The TO-252 package measures approximately 6.73 mm in length, 6.22 mm in width, and 2.41 mm in height.
This model supports a maximum power dissipation of 83 W, allowing for robust thermal performance.
It operates efficiently over a temperature range from -55°C to 150°C.
The maximum drain source resistance is 950 mΩ, ensuring low conduction losses.
The gate source voltage can withstand from -30 V to +30 V, enhancing stability during operation.
It is designed for surface mounting applications.
This device is commonly used in LED lighting, automotive power distribution, and high-voltage industrial applications.
This model features an N-channel type configuration.
It belongs to the CoolMOS CE series, which is designed for power management and high-voltage applications.
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